Datasheet > 1SS226(T5LPEV,F)

1SS226(T5LPEV,F)

更新时间： 2024-11-21 03:23:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	172K
描述
Rectifier Diode, 2 Element, 0.1A, 85V V(RRM), Silicon

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1SS226(T5LPEV,F) 数据手册

1SS226

Switching Diodes Silicon Epitaxial Planar

1SS226

1. Applications

•

Ultra-High-Speed Switching

2. Packaging and Internal Circuit

1: Anode 1

2: Cathode 2

3: Cathode1 / Anode 2

S-Mini

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Peak reverse voltage

Symbol

Note

Rating

Unit

VRM

Reverse voltage

Peak forward current

IFM

(Note 1)

300

Average rectified current

Power dissipation

100

(Note 2)

150

Non-repetitive peak forward surge current

Junction temperature

Storage temperature

IFSM

(Note 1), (Note 3)

125



Tstg

-55 to 125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Unit rating. Total rating = Unit rating × 70%

Note 2: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.

Note 3: Measured with a 10 ms pulse.

Start of commercial production

1982-09

2015-01-08

Rev.2.0

12 3 4 5

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