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1SS226-TP-HF PDF预览

1SS226-TP-HF

更新时间: 2024-11-20 20:04:55
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 214K
描述
Rectifier Diode, 2 Element, 0.1A, Silicon, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3

1SS226-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.25配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3元件数量:2
端子数量:3最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.15 W最大反向恢复时间:0.004 µs
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

1SS226-TP-HF 数据手册

 浏览型号1SS226-TP-HF的Datasheet PDF文件第2页浏览型号1SS226-TP-HF的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
1SS226  
Features  
·
·
Halogen free available upon request by adding suffix "-HF"  
Low Current Leakage.  
Surface Mount SOT-23 Package  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
150mW SWITCHING  
DIODE  
Maximum Ratings  
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +150°C  
150mW Power dissipation.  
SOT-23  
x
A
D
Marking:C3  
B
C
F
E
Maximum Ratings  
G
H
J
Reverse Breakdown Voltage  
VR  
80V  
K
Average Forward Current  
MaximumForward Current  
Total Power Dissipation @ TA = 25°C  
Storage Temperature Range  
Junction Temperature  
Io  
IFM  
PD  
100mA  
300mA  
150mW  
DIMENSIONS  
MM  
INCHES  
MIN  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
DIM  
A
B
C
D
E
MAX  
.120  
.104  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
T
-55°C to 150°C  
stg  
T
j
125°C  
F
G
H
J
.100  
1.12  
.180  
.51  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
.003  
.015  
.085  
.37  
Ratings  
Symbol  
Max.  
Notes  
K
Forward Voltage at  
Suggested Solder  
Pad Layout  
IF=1mA  
715mV  
IF=10mA  
IF=100mA  
Reverse Current  
855mV  
1200mV  
25nA  
.031  
.800  
IR  
VR=20V  
VR = 80V  
.035  
.900  
0.5uA  
Reverse Breakdown  
Voltage  
Capacitance  
.079  
2.000  
V(BR)  
CJ  
80V(min)  
3pF  
inches  
IR=100 uA  
mm  
Measured at  
1.0MHz, VR=0V  
Reverse Recovery  
Time  
trr  
4ns  
.037  
.950  
.037  
.950  
www.mccsemi.com  
Revision: B  
2013/01/01  
1 of 3  

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