Datasheet > 1SS244

1SS244

更新时间： 2024-11-18 06:19:47

品牌	Logo	应用领域
商升特 - SEMTECH		二极管局域网
页数	文件大小	规格书
2页	188K
描述
SILICON EPITAXIAL PLANAR DIODE

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中文翻译

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数据手册

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1SS244 数据手册

1SS244

SILICON EPITAXIAL PLANAR DIODE

High voltage switching

Max. 0.45

Min. 27.5

Max. 2.9

Min. 27.5

Max. 1.9

Black

Cathode Band

Black

Part No.

XXX

Glass Case DO-34

Dimensions in mm

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Peak Reverse Voltage

Reverse Voltage

Symbol

V_RM

V_R

Value

Unit

250

220

Mean Rectifying Current

Peak Forward Current

Surge Current (1 s)

I_O

200

I_FM

625

I_surge

P_tot

T_j

300

Power Dissipation

Junction Temperature

Storage Temperature Range

175

T_S

- 65 to + 175

Characteristics at T_a= 25 C

Parameter

Symbol

V_F

Max.

1.5

Unit

Forward Voltage

at I_F= 200 mA

Reverse Current

at V_R= 220 V

I_R

C_T

t_rr

µA

Capacitance between Terminals

at f = 1 MHz

Reverse Recovery Time

at I_R= 20 mA, I_F= 20 mA, R_L= 50 Ω

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 23/06/2007

中文翻译

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与1SS244相关器件

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