Datasheet > 1SS226T5LFT

1SS226T5LFT

更新时间： 2022-05-20 00:12:19

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
3页	180K
描述
Ultra High Speed Switching Application

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1SS226T5LFT 数据手册

1SS226

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS226

Unit: mm

Ultra High Speed Switching Application

z Small package

: SC-59

: V

z Low forward voltage

= 0.9V (typ.)

F (3)

z Fast reverse recovery time: t = 1.6ns (typ.)

z Small total capacitance

: C = 0.9pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

300 (*)

100 (*)

2 (*)

FSM

Power dissipation

150

°C

JEDEC

TO−236MOD

Junction temperature

125

JEITA

SC−59

Storage temperature range

−55~125

stg

TOSHIBA

1−3G1G

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.012g (typ.)

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(*) Unit rating. Total rating = Unit rating × 0.7.

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.60

0.72

0.90

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

―

= 10mA

―

= 100mA

1.20

0.1

0.5

3.0

4.0

―

= 30V

Reverse current

μA

―

= 80V

―

Total capacitance

―

= 0, f = 1MH

0.9

1.6

Reverse recovery time

―

I = 10mA (Fig.1)

Marking

2007-11-01

12 3

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