1SS226-T

更新时间： 2024-11-20 13:02:51

品牌	Logo	应用领域
RECTRON		整流二极管开关光电二极管
页数	文件大小	规格书
2页	88K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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1SS226-T 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.76	JESD-609代码：	e3
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

1SS226-T 数据手册

RECTRON

TECHNICAL SPECIFICATION

SEMICONDUCTOR

1SS226

SOT-23 SWITCHING DIODE

FEATURES

* Power dissipation

PD:

150 mW(Tamb=25^OC)

Forward current

IF:

100 mA

Reverse voltage

V : 80

SOT-23

Operating and storage junction temperature range

T ,Tstg: -55^OCto+150^OC

MECHANICAL DATA

* Case: Molded plastic

0.055(1.40)

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

0.047(1.20)

0.006(0.15)

0.003(0.08)

0.043(1.10)

0.035(0.90)

* Weight: 0.008 gram

0.020(0.50)

0.012(0.30)

0.004(0.10)

0.000(0.00)

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

0.019(2.00)

0.071(1.80)

0.118(3.00)

0.110(2.80)

Ratings at 25 ^o

C ambient temperature unless otherwise specified.

Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )

CHARACTERISTICS

SYMBOL

V_(BR)

I_R

MIN.

TYP.

MAX.

UNITS

Reverse Breakdown Voltage (I =100µA)

Reverse voltage leakage current (V =80V)

0.5

1.2

µA

Forward voltage (I =100mA)

V_F

Diode capacitance (V =0V,f=1MHz)

C_D

Reverse recovery time

2006-3

中文翻译

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