Datasheet > 1N645-1/TR

1N645-1/TR

更新时间： 2024-01-09 09:40:58

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
1页	85K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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1N645-1/TR 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.67
二极管类型：	RECTIFIER DIODE	JESD-609代码：	e0
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

1N645-1/TR 数据手册

FEATURES

•

1N645-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240

SILICON RECTIFIER

METALLURGICALLY BONDED

HERMETICALLY SEALED

DOUBLE PLUG CONSTRUCTION

1N645-1

MAXIMUM RATINGS AT 25 °C

Operating Temperature:

Storage Temperature:

Surge Current A, sine 8.3mS:

Total Power Dissipation:

Operating Current:

-65°C to +175°C

5.0A

500mW

400mA, T_A= +25°C

Operating Current:

Derating Factor:

150mA, T_A= +150°C

2mA/°C above +25°C

Derating Factor:

D.C. Reverse Voltage (VRWM):

6mA/°C above +150°C

225V

DC ELECTRICAL CHARACTERISTICS

V_F

I_R

Ambient

(°C)

Ambient

(°C)

I_F

Min

Max

V_R

V (dc)

Min

µA

Max

µA

150

-55

400

0.80

0.70

1.00

0.95

1.20

150

225

270(ac)

225

0.050

DESIGN DATA

Case: Hermetically sealed glass package per MIL-

PRF-19500/240 DO-35 outline

Lead Material: Copper clad steel

Lead Finish: Tin/Lead

AC ELECTRICAL CHARACTERISTICS AT 25°C

Symbol

Min

Max

Capacitance @ V_R= 4V

Thermal Resistance (R_θJL): 250°C/W maximum

at L=.375”

Thermal Impedance (Z_θJX): 35°C/W maximum

Marking: Blue body coat, Black digits.

Polarity: Cathode end is banded.

IRELAND - GORT ROAD, ENNIS, CO. CLARE

PHONE:

TOLL FREE:

FAX:

+353 65 6840044

+186 62 702434

+353 65 6822298

WWW.MICROSEMI.COM

U.S.A. DOMESTIC SALES CONTACT

PHONE:

(617) 926 0404

1 800 666 2999

TOLL FREE:

中文翻译

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