1N5807US thru 1N5811US
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RECOVERY GLASS RECTIFIERS
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/477 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 6.0 Amp rated rectifiers for working peak reverse
voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using
an internal “Category I” metallurgical bond. These devices are also available in axial-
leaded package configurations (see separate data sheet for 1N5807 thru 1N5811).
Microsemi also offers numerous other rectifier products to meet higher and lower current
ratings with various recovery time speed requirements including standard, fast, and
ultrafast device types in both through-hole and surface mount packages.
Package “E”
or D-5B
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
Surface mount package series equivalent to the
JEDEC registered 1N5807 to 1N5811 series
•
•
•
Ultrafast recovery 6 Amp rectifiers series 50 to 150 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward loss
High forward surge current capability
•
•
•
•
•
Voidless-hermetically-sealed glass package
Extremely robust construction
•
•
•
Triple-layer passivation
Low thermal resistance
Internal “Category I” Metallurgical bonds
Controlled avalanche with peak reverse power
capability
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/477
•
Inherently radiation hard as described in Microsemi
MicroNote 050
•
Axial-leaded equivalents also available (see separate
data sheet for 1N5807 thru 1N5811)
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
Operating Temperature: -65oC to +175oC.
Storage Temperature: -65oC to +175oC.
•
•
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish. Note: Previous inventory had solid
Silver end caps with Tin/Lead (Sn/Pb) finish.
Average Rectified Forward Current (IO): 6 Amps @
EC = 75ºC End Cap temperature (see note 1)
Thermal Resistance: 6.5 ºC/W junction to end cap
Thermal Impedance: 1.5 ºC/W @ 10 ms heating time
Forward Surge Current (8.3 ms half sine) 125 Amps
T
•
•
•
•
•
•
•
•
•
MARKING & POLARITY: Cathode band only
Tape & Reel option: Standard per EIA-481-B
Weight: 539 mg
Capacitance: 60 pF at 10 volts, f = 1 MHz
Solder temperature: 260ºC for 10 s (maximum)
See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
WORKING BREAKDOWN
AVERAGE
AVERAGE
MAXIMUM
FORWARD
VOLTAGE
@ 4 A
(8.3 ms pulse)
VF
REVERSE
CURRENT
(MAX)
SURGE
CURRENT
(MAX)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
PEAK
REVERSE
VOLTAGE
VOLTAGE
(MIN.)
@ 100μA
RECTIFIED RECTIFIED
CURRENT
CURRENT
TYPE
I
I
@ V
I
FSM
O1
O2
RWM
V
t
rr
IR
(NOTE 3)
AMPS
V
@TA=55ºC
(Note 2)
AMPS
RWM
BR
@T =75ºC
EC
(Note 1)
AMPS
VOLTS
VOLTS
VOLTS
ns
μA
25oC
100oC 25oC 125oC
1N5807US
1N5809US
1N5811US
50
60
6.0
6.0
6.0
3.0
3.0
3.0
0.875
0.800
0.800
0.800
5
5
5
525
525
525
125
125
125
30
30
30
100
150
110
160
0.875
0.875
NOTE 1: Rated at TEC = 75ºC. Derate at 60 mA/ºC for TEC above 75ºC
NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175ºC
NOTE 3: TA = 25oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: I = 1.0 A, I
= 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min
RM
F
Copyright © 2009
8-03-2009 REV F; SD42A
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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