1N5809CB

更新时间： 2024-02-15 06:06:04

品牌	Logo	应用领域
美高森美 - MICROSEMI		整流二极管超快恢复二极管快速恢复二极管
页数	文件大小	规格书
3页	200K
描述
VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N5809CB 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	包装说明：	O-LELF-R2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.12
Is Samacsys：	N	应用：	SUPER FAST RECOVERY
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.925 V	JESD-30 代码：	O-LELF-R2
最大非重复峰值正向电流：	125 A	元件数量：	1
相数：	1	端子数量：	2
最高工作温度：	175 °C	最低工作温度：	-65 °C
最大输出电流：	3 A	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
最大反向电流：	5 µA	最大反向恢复时间：	0.03 µs
表面贴装：	YES	端子形式：	WRAP AROUND
端子位置：	END	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

1N5809CB 数据手册

1N5807CB thru 1N5811CB

VOIDLESS-HERMETICALLY-SEALED

ULTRAFAST RECOVERY GLASS

RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-19500/742 and

is ideal for high-reliability applications where a failure cannot be tolerated. These industry-

recognized 6.0 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts

are hermetically sealed with voidless-glass construction using an internal “Category III”

metallurgical bond. These devices are also available in surface mount MELF package

configurations by adding a “US” suffix (see separate data sheet for 1N5807CBUS thru

1N5811CBUS). Microsemi also offers numerous other rectifier products to meet higher and

lower current ratings with various recovery time speed requirements including standard, fast

and ultrafast device types in both through-hole and surface mount packages.

“E” Package

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

• Popular JEDEC registered 1N5807 to 1N5811 series

• Voidless hermetically sealed glass package

• Extremely robust construction

• Triple-layer passivation

• Internal “Category III” Metallurgical bonds

• JAN, JANTX, & JANTXV available per MIL-PRF-19500/742

• Ultrafast recovery 6 Amp rectifier series 50 to 150 V

• Military and other high-reliability applications

• Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

• High forward surge current capability

• Low thermal resistance

• Further screening options are available for JANS in

• Controlled avalanche with peak reverse power

accordance with MIL-PRF-19500/742 by using a “SP” prefix

capability

• Surface mount equivalents also available in a square end-

cap MELF configuration with “US” suffix (see separate data

sheet for 1N5807CBUS thru 1N5811CBUS)

• Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• Junction Temperature: -65^oC to +175^oC

• Storage Temperature: -65^oC to +175^oC

• Average Rectified Forward Current (I_O): 6 A @ T_L= 75ºC

at 3/8 inch lead length (see note 1)

•

CASE: Hermetically sealed voidless hard glass with

Tungsten slugs

TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)

over Copper.

•

MARKING: Body painted and part number, etc.

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-296

Weight: 750 mg

• Thermal Resistance: 22 ºC/W junction to lead (L=.375 in)

• Thermal Impedance: 1.5 ºC/W @ 10 ms heating time

• Forward Surge Current (8.3 ms half sine) 125 Amps

• Capacitance: 60 pF at 10 volts, f = 1 MHz

• Solder temperature: 260ºC for 10 s (maximum)

See package dimensions on last page

ELECTRICAL CHARACTERISTICS

WORKING BREAKDOWN AVERAGE

AVERAGE

RECTIFIED RECTIFIED

CURRENT CURRENT

MAXIMUM

FORWARD

VOLTAGE

@ 4 A

(8.3 ms pulse)

V_F

REVERSE

CURRENT

(MAX)

SURGE

CURRENT

(MAX)

REVERSE

RECOVERY

TIME (MAX)

(NOTE 4)

PEAK

REVERSE

VOLTAGE

(MIN.)

@ 100μA

TYPE

@ V

FSM

(NOTE 3)

RWM

I_R

@T_L=75ºC

(Note 1)

AMPS

@T_A=55ºC

Note 2

RWM

VOLTS

AMPS

μA

25^oC

0.875

100^oC 25^oC 125^oC

0.800

1N5807CB

1N5809CB

1N5811CB

100

150

110

160

6.0

3.0

525

125

NOTE 1: Rated at T_L= 75ºC at 3/8 inch lead length. Derate at 60 mA/ºC for T_Labove 75ºC.

NOTE 2: Derate linearly at 25 mA/ºC above T_A= 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to

ambient is sufficiently controlled where T

does not exceed 175ºC

)

J(max

NOTE 3: T_A= 25^oC @ I_O= 3.0 A and V_RWMfor ten 8.3 ms surges at 1 minute intervals

NOTE 4: I_F= 1.0 A, I_RM= 1.0 A, I_R(REC)= 0.10 A and di/dt = 100 A/µs min

2-25-2008 REV A

Microsemi

Scottsdale Division

Page 1

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

下载PDF

与1N5809CB相关器件

型号	品牌	获取价格	描述	数据表
1N5809CBUS	MICROSEMI	获取价格	SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS
1N5809D3A	SEME-LAB	获取价格	ULTRA FAST RECOVERY POWER RECTIFIER
1N5809D3B	SEME-LAB	获取价格	ULTRA FAST RECOVERY POWER RECTIFIER
1N5809R	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon,
1N5809S	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
1N5809U4	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, CERAMIC PACKAGE-3
1N5809URS	MICROSEMI	获取价格	VOIDLESS - HERMETICALLY- SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
1N5809US	EIC	获取价格	ULTRAFAST RECOVERY RECTIFIER DIODES
1N5809US	SENSITRON	获取价格	HERMETIC AXIAL / MELF HIGH EFFICIENCY RECTIFIER
1N5809US	MICROSEMI	获取价格	SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

与1N5809CB相关文章

共享储能电站：数据驱动与政策引领下的黄金机遇
2024-06-26

10
US1M数据手册解读：产品特性、替换型号推荐
2024-06-26

4
解析BAV99LT1G手册：参数分析、替换型号推荐
2024-06-26

3
解读BSS138PW数据手册：产品特性、电气参数及替换型号推荐
2024-06-26

6

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5809CB

1N5809CB 技术参数

1N5809CB 数据手册

与1N5809CB相关器件

与1N5809CB相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5809CB

1N5809CB 技术参数

1N5809CB 数据手册

与1N5809CB相关器件

与1N5809CB相关文章

您还可以找

您在本页遇到什么问题？