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1N5809US

更新时间： 2024-01-21 04:14:38
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管超快恢复二极管快速恢复二极管
页数 文件大小 规格书
3页 401K
描述
SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

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中文翻译

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1N5809US 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Obsolete包装说明：O-LELF-R2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.12
Is Samacsys：N应用：SUPER FAST RECOVERY
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.925 VJESD-30 代码：O-LELF-R2
最大非重复峰值正向电流：125 A元件数量：1
相数：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：3 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大反向电流：5 µA最大反向恢复时间：0.03 µs
表面贴装：YES端子形式：WRAP AROUND
端子位置：END处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

1N5809US 数据手册

 浏览型号1N5809US的Datasheet PDF文件第2页浏览型号1N5809US的Datasheet PDF文件第3页 
1N5807US thru 1N5811US  
SURFACE MOUNT VOIDLESS-  
HERMETICALLY-SEALED ULTRA FAST  
RECOVERY GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to  
MIL-PRF-19500/477 and is ideal for high-reliability applications where a failure  
cannot be tolerated. These industry-recognized 6.0 Amp rated rectifiers for working  
peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-  
glass construction using an internal “Category I” metallurgical bond. These devices  
are also available in axial-leaded package configurations (see separate data sheet  
for 1N5807 thru 1N5811). Microsemi also offers numerous other rectifier products  
to meet higher and lower current ratings with various recovery time speed  
requirements including standard, fast, and ultrafast device types in both through-  
hole and surface mount packages.  
Package “E”  
or D-5B  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Surface mount package series equivalent to the  
•
Ultrafast recovery 6 Amp rectifiers series 50 to 150 V  
JEDEC registered 1N5807 to 1N5811 series  
•
•
Military and other high-reliability applications  
Switching power supplies or other applications  
requiring extremely fast switching & low forward loss  
High forward surge current capability  
•
•
Voidless-hermetically-sealed glass package  
Extremely robust construction  
Triple-layer passivation  
•
•
•
•
•
Low thermal resistance  
Internal “Category I” Metallurgical bonds  
•
Controlled avalanche with peak reverse power  
JAN, JANTX, JANTXV, and JANS available per MIL-  
capability  
PRF-19500/477  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
•
Axial-leaded equivalents also available (see separate  
data sheet for 1N5807 thru 1N5811)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
Operating Temperature: -65oC to +175oC.  
•
•
CASE: Hermetically sealed voidless hard glass  
Storage Temperature: -65oC to +175oC.  
with Tungsten slugs  
TERMINALS: End caps are solid Silver with  
Tin/Lead (Sn/Pb) finish  
MARKING & POLARITY: Cathode band only  
Tape & Reel option: Standard per EIA-481-B  
Weight: 539 mg  
Average Rectified Forward Current (IO): 6 Amps @  
T
EC = 75ºC End Cap temperature (see note 1)  
•
•
•
Thermal Resistance: 10 ºC/W junction to end cap  
Thermal Impedance: 1.5 ºC/W @ 10 ms heating time  
Forward Surge Current (8.3 ms half sine) 125 Amps  
•
•
•
•
•
Solder temperature: 260ºC for 10 s (maximum)  
See package dimensions and recommended pad  
layout on last page  
ELECTRICAL CHARACTERISTICS  
WORKING BREAKDOWN  
AVERAGE  
AVERAGE  
MAXIMUM  
FORWARD  
VOLTAGE  
@ 4 A  
REVERSE  
CURRENT  
(MAX)  
SURGE  
CURRENT  
(MAX)  
REVERSE  
RECOVERY  
TIME (MAX)  
(NOTE 4)  
PEAK  
VOLTAGE  
(MIN.)  
RECTIFIED RECTIFIED  
REVERSE  
VOLTAGE  
CURRENT  
CURRENT  
TYPE  
@ 100µA  
I
I
@ V  
I
FSM  
O1  
O2  
RWM  
(8.3 ms pulse)  
VF  
V
t
IR  
(NOTE 3)  
AMPS  
V
@TA=55ºC  
RWM  
rr  
BR  
@T =75ºC  
EC  
(Note 2)  
(Note 1)  
AMPS  
VOLTS  
VOLTS  
AMPS  
VOLTS  
ns  
µA  
25oC  
100oC 25oC 100oC  
1N5807US  
1N5809US  
1N5811US  
50  
60  
6.0  
6.0  
6.0  
3.0  
3.0  
3.0  
0.875  
0.800  
0.800  
0.800  
5
5
5
150  
150  
150  
125  
125  
125  
30  
30  
30  
100  
110  
160  
0.875  
0.875  
150  
NOTE 1: Rated at TEC = 75ºC. Derate at 60 mA/ºC for TEC above 75ºC  
NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to  
ambient is sufficiently controlled where TJ(max) does not exceed 175ºC  
NOTE 3: TA = 25oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals  
NOTE 4: I = 1.0 A, I  
= 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min  
RM  
F
Copyright 2004  
1-14-2005 REV B  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

中文翻译

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