Datasheet > 1N5809U4

1N5809U4

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	271K
描述
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, CERAMIC PACKAGE-3

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数据手册

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1N5809U4 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

HIGH RELIABILITY POWER RECTIFIER

• 125 Amps Surge Rating

• Ceramic Surface Mount (U4 Style)

DEVICES

LEVELS

1N5807U4

1N5809U4

1N5811U4

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Peak Repetitive

Reverse Voltage

Symbol

Value

Unit

1N5807U4

1N5809U4

1N5811U4

1N5807U4M

1N5809U4M

1N5811U4M

100

150

V_RWM

Average Forward Current, Te_C= 75°

I_F

Peak Surge Forward Current @ t_p= 8.3ms, half sine

T_C= 25°C, T = 1/120s

I_FSM

R_θjc

T_C

125

Thermal Resistance, Junction to Case

Operating Case Temperature Range

Storage Temperature Range

6.5

°C/W

°C

-65°C to 175°C

T_stg

°C

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Forward Voltage

I_F= 3A, T_A= 25°C*

I_F= 4A, T_A= 25°C*

I_F= 6A, T_A= 25°C*

.865

.875

.925

V_F

Reverse Current

V_R= 50, T_A= 25°C

V_R= 100, T_A= 25°C

V_R= 150, T_A= 25°C

1N5807U4 1N5807U4M

1N5809U4 1N5809U4M

1N5811U4 1N5811U4M

U4M

I_R

μA

Reverse Current

V_R= 50, T_A= 125°C

V_R= 100, T_A= 125°C 1N5809U4 1N5809U4M

V_R= 150, T_A= 125°C 1N5811U4 1N5811U4M

1N5807U4 1N5807U4M

I_R

525

Reverse Recovery Time

I_F= I_RM= 1.0A

1N5807U4 1N5807U4M

i_(REC)= 0.1A

Trr

1N5809U4 1N5809U4M

di/dt = 100A/us (min)

1N5811U4 1N5811U4M

525

μA

* Pulse test: Pulse width 300 µsec, Duty cycle 2%

Note:

T4-LDS-0147 Rev. 1 (091865)

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12 3 4

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