生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.71 | 应用: | FAST RECOVERY |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 0.875 V | JESD-30 代码: | O-LALF-W2 |
最大非重复峰值正向电流: | 125 A | 元件数量: | 1 |
相数: | 1 | 端子数量: | 2 |
最大输出电流: | 6 A | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
认证状态: | Not Qualified | 最大反向电流: | 5 µA |
最大反向恢复时间: | 0.03 µs | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5809 | NJSEMI |
获取价格 |
HIGH EFFICIENCY, ESP,K 2.5 AMP TO 20 AMP |
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1N5809 | SEMTECH |
获取价格 |
RECTIFIER, up to 150V, 6A, 30ns |
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1N5809 | MICROSEMI |
获取价格 |
ULTRA FAST RECTIFIERS |
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1N5809 | EIC |
获取价格 |
ULTRAFAST RECOVERY RECTIFIER DIODES |
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1N5809 | SENSITRON |
获取价格 |
HERMETIC AXIAL / MELF HIGH EFFICIENCY RECTIFIER |
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1N5809CB | MICROSEMI |
获取价格 |
VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS |
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1N5809CBUS | MICROSEMI |
获取价格 |
SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS |
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1N5809D3A | SEME-LAB |
获取价格 |
ULTRA FAST RECOVERY POWER RECTIFIER |
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1N5809D3B | SEME-LAB |
获取价格 |
ULTRA FAST RECOVERY POWER RECTIFIER |
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1N5809R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, |
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