Datasheet > 1N5711W_08

1N5711W_08

更新时间： 2022-09-13 16:21:29

品牌	Logo	应用领域
美台 - DIODES		肖特基二极管
页数	文件大小	规格书
3页	109K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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1N5711W_08 数据手册

1N5711W

100

10,000

1,000

= 125ºC

= 75ºC

= 25ºC

100

1.0

0.1

= 0ºC

= -40ºC

0.1

1.6

0.4

1.0

0.2

0.6

1.2 1.4

0.8

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 1 Typical Forward Characteristics

V_R, INSTANTANEOUS REVERSE VOLTAGE (V)

Fig. 2 Typical Reverse Characteristics

1.8

350

300

Note 1

1.6

1.4

1.2

1.0

0.8

250

200

150

100

0.6

0.4

0.2

125

150

100

V_R, DC REVERSE VOLTAGE (V)

Fig. 3 Total Capacitance vs. Reverse Voltage

T_A, AMBIENT TEMPERATURE (°C)

Fig. 4 Power Derating Curve

Ordering Information (Note 5)

Part Number

Case

Packaging

1N5711W-7-F

SOD-123

3000/Tape and Reel

Notes:

5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

SA = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: T = 2006)

M = Month (ex: 9 = September)

Date Code Key

Year

1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

2 of 3

www.diodes.com

July 2008

1N5711W

Document number: DS11015 Rev. 14 - 2

123

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