Datasheet > 1N5712

1N5712

更新时间： 2023-12-06 20:08:47

品牌	Logo	应用领域
森美特 - SUNMATE		二极管
页数	文件大小	规格书
3页	724K
描述
Switching Diodes Switch detector

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N5712 数据手册

1N5712

SMALL SIGNAL SCHOTTKY DIODES

DO-35(GLASS)

Features

Metal-to-silicon junction

1.0 2(26.0)

MIN.

High breakdown voltage

Low turn-on voltage

0.079(2.0)

MAX

Ultrafast switching speed

0.165 (4.2)

MAX

Mechanical Data

Case: DO-35, glass case

1.0 2(26.0)

MIN.

Polarity: Color band denotes cathode

Weight: 0.004 ounces, 0.13 grams

0.020(0.52)

TYP

Dimensions in millimeters

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbols

Value

Unit

Peak reverse voltage

V_RRM

P_tot

20.0

430.0

Power dissipation (Infinite Heat Sink)

Forward continuous current

I_FSM

35.0

Junction and storage temperature range

Maximumlead temperature for soldering during 10S at 4mmfromcase

T /T_STG

c-55 ---+ 150

230

T_A= 25ꢀC unless otherwise specified

Electrical Characteristics

Characteristic

Symbols

Typ.

Max.

Unit

Min.

20.0

Reverse breakdown voltage

@ I_R=10 A

I^F=1mA

V_R

I_R

Leakage current

@ V_R=16V

150

0.41

1.0

Forward voltage drop

V_F

Test pulse: tp 300 s <2% I^F=35mA

Junction capacitance @ V_R=0V,f=1MHz

Thermal resistance

C_J

400

R_θ_JA

K/W

1 of 3

www.sunmate.tw

12 3

下载PDF

与1N5712相关器件

型号	品牌	描述	获取价格	数据表
1N5712-1	CDI-DIODE	SCHOTTKY BARRIER DIODES	获取价格
1N5712-1	MICROSEMI	SCHOTTKY BARRIER DIODES	获取价格
1N5712-1/TR	MICROSEMI	Rectifier Diode,	获取价格
1N5712-1JANTX	MICROSEMI	Schottky Barrier Diode Qualified per MIL-PRF-19500/444	获取价格
1N5712UB	MICROSEMI	SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT	获取价格
1N5712UBCA	MICROSEMI	SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT	获取价格