生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.63 | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | O-LALF-W2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
最低工作温度: | -65 °C | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
认证状态: | Not Qualified | 参考标准: | MIL-S-19500/445 |
表面贴装: | NO | 技术: | SCHOTTKY |
端子面层: | TIN LEAD | 端子形式: | WIRE |
端子位置: | AXIAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5712-1/TR | MICROSEMI |
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Rectifier Diode, | |
1N5712-1JANTX | MICROSEMI |
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Schottky Barrier Diode Qualified per MIL-PRF-19500/444 | |
1N5712UB | MICROSEMI |
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SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT | |
1N5712UBCA | MICROSEMI |
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SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT | |
1N5712UBCC | MICROSEMI |
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SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT | |
1N5712UBD | MICROSEMI |
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SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT | |
1N5712UR-1 | MICROSEMI |
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SCHOTTKY BARRIER DIODES | |
1N5712UR-1 | CDI-DIODE |
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SCHOTTKY BARRIER DIODES | |
1N5712UR-1E3 | MICROSEMI |
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Rectifier Diode, Schottky, 1 Element, 0.075A, 20V V(RRM), Silicon, DO-213AA, HERMETIC SEAL | |
1N5713 | NJSEMI |
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GENERAL PURPOSE SCHOTTKY RECTIFIER |