Datasheet > 1N5712-1/TR

1N5712-1/TR

更新时间： 2024-09-28 05:24:15

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	55K
描述
Rectifier Diode,

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中文翻译

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数据手册

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1N5712-1/TR 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

SCHOTTKY BARRIER – LOW REVERSE LEAKAGE CHARACTERISTICS

DIODES

– METALLURGICALLY BONDED

Qualified per MIL-PRF-19500/444

DEVICES

LEVELS

JAN

JANTX

1N5711-1

1N5712-1

1N6857-1

1N6858-1

*DSB2810

*DSB5712

*1N5711

JANTXV

* These devices are only available as Commercial Level Product.

*COMMERCIAL

MAXIMUM RATING AT 25°C

Operating Temperature:

Storage Temperature:

Operating Current:

-65°C to +150°C

5711 types

2810, 5712 & 6858 types

6857 type

:33mA dc @ T_L= +130°C, L = 3/8”

:75mA dc @ T_L= +110°C, L = 3/8”

:75mA dc @ T_L= +70°C, L = 3/8”

Derate to 0 (zero) mA @ +150°C

Derating:

all types:

ELECTRICAL CHARACTERISTICS (T_A= 25°C, unless otherwise specified)

MAXIMUM

CAPACITANCE @

V_R= 0 VOLTS

f = 1.0MHz

MINIMUM

BEAKDOWN

VOLTAAGE

MAXIMUM

FORWARD

VOLTAGE

MAXIMUM

FORWARD

VOLTAGE

MAXIMUM REVERSE

LEAKAGE CURRENT

ESDS

CLASS

TYPE

NUMBER

V_F@ 1mA

VOLTS

0.41

V_F@ I_F

MILLIAMPS

1.0 @ 35

I_R@ V_R

C_T

V_BR@ 10A

VOLTS

PICO FARADS

DO-35

DSB2810

1N5711, -1

DSB5712

1N5712-1

1N6857-1

1N6858-1

100

200

150

200

2.0

4.5

0.41

1.0 @ 15

0.41

1.0 @ 35

0.41

1.0 @ 35

0.35

0.75 @ 35

0.65 @ 15

0.36

T4-LDS-0040 Rev. 3 (111938)

Page 1 of 3

12 3

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与1N5712-1/TR相关器件

型号	品牌	获取价格	描述	数据表
1N5712-1JANTX	MICROSEMI	获取价格	Schottky Barrier Diode Qualified per MIL-PRF-19500/444
1N5712UB	MICROSEMI	获取价格	SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT
1N5712UBCA	MICROSEMI	获取价格	SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT
1N5712UBCC	MICROSEMI	获取价格	SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT
1N5712UBD	MICROSEMI	获取价格	SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT
1N5712UR-1	MICROSEMI	获取价格	SCHOTTKY BARRIER DIODES
1N5712UR-1	CDI-DIODE	获取价格	SCHOTTKY BARRIER DIODES
1N5712UR-1E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 0.075A, 20V V(RRM), Silicon, DO-213AA, HERMETIC SEAL
1N5713	NJSEMI	获取价格	GENERAL PURPOSE SCHOTTKY RECTIFIER
1N5719	ASI	获取价格	SILICON PIN DIODE