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1N5719 PDF预览

1N5719

更新时间: 2024-02-11 16:02:19
品牌 Logo 应用领域
ASI PIN二极管开关测试衰减器
页数 文件大小 规格书
1页 15K
描述
SILICON PIN DIODE

1N5719 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.7其他特性:LOW HARMONIC DISTORTION
应用:ATTENUATOR; SWITCHING最小击穿电压:150 V
外壳连接:ISOLATED配置:SINGLE
最大二极管电容:0.3 pF二极管元件材料:SILICON
最大二极管正向电阻:1.25 Ω二极管类型:PIN DIODE
少数载流子标称寿命:0.1 µs元件数量:1
最大功率耗散:0.25 W认证状态:Not Qualified
技术:POSITIVE-INTRINSIC-NEGATIVEBase Number Matches:1

1N5719 数据手册

  
1N5719  
SILICON PIN DIODE  
PACKAGE STYLE 01  
DESCRIPTION:  
The1N5719 is a Silicon PIN Diode  
Designed for General Purpose  
Attenuator and Switching Applications  
from 100 MHz to 3 GHz.  
MAXIMUM RATINGS  
100 mA  
IF  
VR  
150 V  
250 mW @ TA = 25 OC  
-65 OC to +200 OC  
-65 OC to +200 OC  
0.7 OC/mW  
PDISS  
TJ  
TSTG  
θJC  
NONE  
CHARACTERISTICS TC = 25 O  
C
SYMBOL  
VBR  
TEST CONDITIONS  
MINIMUM  
TYPICAL MAXIMUM  
UNITS  
V
IR = 10 µA  
150  
CT  
VR = 100 V  
f = 1.0 MHz  
0.3  
pF  
RS  
τ
IF = 100 mA  
IF = 50 mA  
VR = 10 V  
f = 100 MHz  
IR = 250 mA  
f = 20 mA  
1.25  
100  
µS  
µS  
trr  
100  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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