Datasheet > 1N5711WS

1N5711WS

更新时间： 2024-11-16 14:53:55

品牌	Logo	应用领域
森美特 - SUNMATE		二极管
页数	文件大小	规格书
2页	297K
描述
Switching Diodes Switch detector

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中文翻译

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数据手册

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1N5711WS 数据手册

1N5711WS

SURFACE MOUNT SCHOTTKY BARRIER DIODES

Features

Low Forward Voltage Drop

Guard Ring Construction for Transient

Protection

Fast Switching Speed

Low Capacitance

Surface Mount Package Ideally Suited for

Automatic Insertion

SOD-323

Dim

Min

2.30

1.75

1.15

0.25

0.05

0.70

0.30

Max

2.70

1.95

1.35

0.35

0.15

0.95

—

Mechanical Data

Case: SOD-323, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.004 grams (approx.)

Marking: A3

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings

Parameter

Symbol

Value

Unit

V_RRM

Repetitive Peak Reverse Voltage

400⁽¹⁾

P_D

Power Dissipation (Infinite Heatsink)

Maximum Single Cycle Surge 10 ms Square Wave

Thermal Resistance Junction to Ambient Air

Junction Temperature

I_FSM

0.3⁽¹⁾

125⁽¹⁾

R_q

°C/mW

°C

T_J

-55 to + 150 ⁽¹⁾

T_S

Storage temperature range

°C

Electrical Characteristics (T_J= 25°C unless otherwise noted)

Test Condition

I_R= 10 mA

Min

Typ

Max

Unit

Parameter

Symbol

V_(BR)R

I_R

Reverse Breakdown Voltage

Reverse Current

V_R= 50 V

I_F= 1mA

I_F= 15mA

200

0.41

1.0

V_F

Forward Voltage Drop

V_R= 0 V, f = 1MHz

Diode Capacitance

Trr

2.0

I_F= I_R= 5mA,

Reverse Recovery Time

recover to 0.1I_R

Note:

(1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature..

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