5秒后页面跳转
1N5711WS_1 PDF预览

1N5711WS_1

更新时间: 2024-11-01 03:54:47
品牌 Logo 应用领域
美台 - DIODES 肖特基二极管
页数 文件大小 规格书
3页 139K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

1N5711WS_1 数据手册

 浏览型号1N5711WS_1的Datasheet PDF文件第2页浏览型号1N5711WS_1的Datasheet PDF文件第3页 
SPICE MODEL: 1N5711WS  
1N5711WS  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
Low Forward Voltage Drop  
Guard Ring Construction for Transient Protection  
Fast Switching Speed  
Low Capacitance  
Surface Mount Package Ideally Suited for Automatic Insertion  
Lead Free/RoHS Compliant (Note 3)  
SOD-323  
Dim  
A
Min  
2.30  
1.60  
1.20  
Max  
2.70  
1.80  
1.40  
B
C
D
1.05 Typical  
Mechanical Data  
E
0.25  
0.20  
0.10  
0.35  
0.40  
0.15  
Case: SOD-323  
Case Material: Molded Plastic. UL Flammability Classification  
Rating 94V-0  
G
H
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over  
Alloy 42 leadframe).  
J
0.05 Typical  
0° 8°  
α
All Dimensions in mm  
Polarity: Cathode Band  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.004 grams (approximate)  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IFM  
49  
15  
V
mA  
mW  
°C/W  
°C  
Forward Continuous Current  
Power Dissipation (Note 1)  
PD  
150  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating Temperature Range  
Storage Temperature Range  
650  
RθJA  
Tj  
-55 to +125  
-55 to +150  
TSTG  
°C  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Reverse Breakdown Voltage (Note 2)  
Symbol  
V(BR)R  
IR  
Min  
70  
Typ  
Max  
Unit  
V
Test Conditions  
IR = 10μA  
Reverse Leakage Current (Note 2)  
200  
nA  
VR = 50V  
0.41  
1.00  
IF = 1.0mA  
IF = 15mA  
Forward Voltage Drop  
VF  
CT  
trr  
V
Total Capacitance  
2.0  
1.0  
pF  
ns  
VR = 0V, f = 1.0MHz  
IF = IR = 5.0mA,  
Irr = 0.1 x IR, RL = 100Ω  
Reverse Recovery Time  
Note:  
1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
3. No purposefully added lead.  
DS31033 Rev. 10 - 2  
1 of 3  
1N5711WS  
© Diodes Incorporated  
www.diodes.com  

与1N5711WS_1相关器件

型号 品牌 获取价格 描述 数据表
1N5711WS-7 DIODES

获取价格

Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, PLASTIC PACKAGE-2
1N5711WS-7-F DIODES

获取价格

SURFACE MOUNT SCHOTTKY BARRIER DIODE
1N5711WS-TP MCC

获取价格

Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC
1N5711X MICROSEMI

获取价格

Rectifier Diode, Schottky, 1 Element, Silicon
1N5712 AGILENT

获取价格

Schottky Barrier Diodes for General Purpose Applications
1N5712 JINANJINGHENG

获取价格

SMALL SIGNAL SCHOTTKY DIODES
1N5712 MICROSEMI

获取价格

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT
1N5712 NJSEMI

获取价格

Schottky Barrier Diodes for General Purpose Applications
1N5712 LGE

获取价格

Small Signal Schottky Diodes
1N5712 GXELECTRONICS

获取价格

SMALL SINGAL SCHOTTKY DIODES