1N5711WS

更新时间： 2024-10-31 22:34:59

品牌	Logo	应用领域
美台 - DIODES		整流二极管肖特基二极管
页数	文件大小	规格书
3页	67K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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中文翻译

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技术参数
数据手册

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1N5711WS 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	5.81
Is Samacsys：	N	配置：	SINGLE
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	1 V
JESD-609代码：	e0	元件数量：	1
最高工作温度：	125 °C	最大输出电流：	0.015 A
最大重复峰值反向电压：	70 V	子类别：	Rectifier Diodes
表面贴装：	YES	技术：	SCHOTTKY
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

1N5711WS 数据手册

1N5711WS

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

Low Forward Voltage Drop

Guard Ring Construction for Transient

Protection

SOD-323

Dim

Min

2.30

1.60

1.20

Max

2.70

1.80

1.40

Fast Switching Speed

Low Capacitance

Surface Mount Package Ideally Suited for

Automatic Insertion

Mechanical Data

1.05 Typical

0.25

0.20

0.10

0.35

0.40

0.15

Case: SOD-323, Plastic

Case material - UL Flammability Rating

Classification 94V-0

Moisture sensitivity: Level 1 per J-STD-020A

Terminals: Solderable per MIL-STD-202,

Method 208

Polarity: Cathode Band

Marking: SA

Weight: 0.004 grams (approx.)

0.05 Typical

0° 8°

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

1N5711WS

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_FM

RMS Reverse Voltage

°C/W

°C

Forward Continuous Current

P_d

Power Dissipation (Note 1)

150

R_qJA

T_j

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating Temperature Range

Storage Temperature Range

650

-55 to +125

-55 to +150

T_STG

°C

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Reverse Breakdown Voltage (Note 2)

Reverse Leakage Current (Note 2)

Symbol

V_(BR)R

I_R

Min

Typ

Max

Unit

Test Condition

_R= 10mA

V_R= 50V

200

I_F= 1.0mA

I_F= 15mA

0.41

1.00

V_F

C_T

t_rr

Forward Voltage Drop (Note 2)

Total Capacitance

V_R= 0V, f = 1.0MHz

2.0

1.0

I_F= I_R= 5.0mA

I_rr= 0.1 x I_R, R_L= 100W

Reverse Recovery Time

Ordering Information^{(Note 3)}

Device

Packaging

Shipping

1N5711WS-7

3000/Tape and Reel

SOD-323

Note:

1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website

at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

DS31033 Rev. 4 - 2

1 of 3

1N5711WS

12 3

中文翻译

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与1N5711WS相关器件

型号	品牌	获取价格	描述	数据表
1N5711WS_08	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
1N5711WS_1	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
1N5711WS-7	DIODES	获取价格	Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, PLASTIC PACKAGE-2
1N5711WS-7-F	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
1N5711WS-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC
1N5711X	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, Silicon
1N5712	AGILENT	获取价格	Schottky Barrier Diodes for General Purpose Applications
1N5712	JINANJINGHENG	获取价格	SMALL SIGNAL SCHOTTKY DIODES
1N5712	MICROSEMI	获取价格	SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT
1N5712	NJSEMI	获取价格	Schottky Barrier Diodes for General Purpose Applications

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