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1N5711W_08 PDF预览

1N5711W_08

更新时间: 2022-09-13 22:07:08
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 肖特基二极管
页数 文件大小 规格书
3页 139K
描述
Surface mount schottky barrier diode

1N5711W_08 数据手册

 浏览型号1N5711W_08的Datasheet PDF文件第1页浏览型号1N5711W_08的Datasheet PDF文件第3页 
BL Galaxy Electrical  
Production specification  
Surface mount schottky barrier diode  
1N5711W  
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified  
Characteristic  
Symbol  
V(BR)R  
VFM  
Min  
70  
-
Max  
Unit  
V
Test Condition  
Reverse Breakdown Voltage  
Forward Voltage  
-
IR=10μA  
0.41  
1.00  
V
IF=1.0mA  
IF=15mA  
Reverse Current  
IR  
-
-
200  
2.0  
nA  
pF  
VR=50V  
Capacitance between  
terminals  
Cj  
VR=0V,f=1.0MHz  
Reverse Recovery Time  
trr  
-
1.0  
ns  
IF=IR=5.0mA,  
Irr=0.1×IR,RL=100Ω  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOD-123  
SOD-123  
K
B
Dim  
Min  
Max  
1.8  
C
A
B
C
D
E
H
J
1.4  
2.55  
2.85  
1.15 Typical  
A
D
0.5  
0.3  
0.6  
0.4  
H
E
0.02  
0.10  
J
0.1 Typical  
K
3.55  
3.85  
All Dimensions in mm  
Document number: BL/SSSKA004  
Rev.A  
www.galaxycn.com  
2

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