Datasheet > 1N4448W

1N4448W

更新时间： 2024-10-30 06:22:03

品牌	Logo	应用领域
商升特 - SEMTECH		二极管局域网
页数	文件大小	规格书
3页	356K
描述
SILICON EPITAXIAL PLANAR DIODE

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1N4448W 数据手册

1N4448W

SILICON EPITAXIAL PLANAR DIODE

Fast Switching Diode

PINNING

DESCRIPTION

Cathode

Anode

Top View

Marking Code: "W1"

Simplified outline SOD-123 and symbol

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_RM

V_R

Value

100

Unit

Peak Reverse Voltage

Reverse Voltage

Average Rectified Output Current

I_O

150

Forward Continuous Current

I_FM

300

0.5

Non-Repetitive Peak Forward Surge Current (at t = 1 µs)

I_FSM

Power Dissipation

P_d

T_j

400

150

Junction Temperature

Storage Temperature Range

T_stg

- 65 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

Forward Voltage

at I_F= 5 mA

at I_F= 10 mA

at I_F= 100 mA

at I_F= 150 mA

0.62

0.72

0.855

V_F

1.25

Reverse Leakage Current

at V_R= 80 V

100

µA

at V_R= 20 V

at V_R= 75 V, T_J= 150 C

I_R

at V_R= 25 V, T_J= 150 C

Reverse Breakdown Voltage

at I_R= 100 µA

V_(BR)R

C_tot

t_rr

Capacitance

at V_R= 0.5 V, f = 1 MHz

Reverse Recovery Time

at I_F= I_R= 10 mA, I_rr= 0.1 X I_R, R_L= 100 Ω

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 07/04/2009

12 3

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