Datasheet > 1N4150UR-1_1

1N4150UR-1_1

更新时间： 2024-11-07 04:24:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管开关
页数	文件大小	规格书
2页	47K
描述
SWITCHING DIODE

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数据手册

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1N4150UR-1_1 数据手册

1N4150UR-1

1N3600UR

CDLL4150

CDLL3600

• 1N4150UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV

PER MIL-PRF-19500/231

• SWITCHING DIODE

• HERMETICALLY SEALED

• METALLURGICALLY BONDED

• DOUBLE PLUG CONSTRUCTION

MAXIMUM RATINGS

Junction Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Operating Current: 300 mA @ T = + 25°C

Derating: 3.1 mA dc/°C Above T

= + 110°C

Forward Surge Current: 4A, (tp = 1µs); 0.5A (tp = 1s)

MILLIMETERS

INCHES

DIM MIN MAX MIN MAX

1.60

0.41

3.30

1.70 0.063 0.067

0.55 0.016 0.022

3.70 .130 .146

ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed.

2.54 REF.

0.03 MIN.

.100 REF.

.001 MIN.

Type

RWM

I = I = 10 to 100 mA dc

= 50 V dc

= 0; f = 1 Mhz;

= 10 µA

= 25°C

= 150°C

ac signals = 50 m V (p-p)

= 100 ohms

FIGURE 1

V dc

V (pk)

µA dc

DESIGN DATA

CDLL3600

CDLL4150,-1

0.1

100

2.5

CASE: DO-213AA, Hermetically sealed

glass case. (MELF, SOD-80; LL34)

FORWARD VOLTAGE LIMITS – ALL TYPES

LEAD FINISH: Tin / Lead

Limits

= 1 mA dc

= 10 mA dc

= 50 mA dc

(Pulsed)

= 100 mA dc

(Pulsed)

= 200 mA dc

(Pulsed)

THERMAL RESISTANCE (R

OJEC

V dc

100 °C/W maximum AT L = 0

minimum

maximum

0.540

0.620

0.680

0.740

0.780

0.860

0.820

0.920

0.870

1.000

THERMAL IMPEDANCE: (Z

°C/W maximum

): 70

POLARITY: Cathode end is banded.

MOUNTING SURFACE SELECTION:

The Axial Coefficient of Expansion

(COE) Of this Device is Approximately

+6PPM/°C. The COE of the Mounting

Surface System Should Be Selected To

Provide A Suitable Match With This

Device.

6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841

PHONE (978) 620-2600

FAX (781) 689-0803

WEBSITE: http://www.microsemi.com

115

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