Datasheet > 1N4150W_09

1N4150W_09

更新时间： 2024-11-09 07:21:15

品牌	Logo	应用领域
强茂 - PANJIT		二极管开关
页数	文件大小	规格书
3页	108K
描述
SURFACE MOUNT SWITCHING DIODES

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中文翻译

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数据手册

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1N4150W_09 数据手册

1N4150W

SURFACE MOUNT SWITCHING DIODES

Unit: inch (mm)

SOD-123

POWER

410 mWatts

50 Volts

VOLTAGE

FEATURES

.154(3.90)

.141(3.60)

• Very fast reverse recovery(TRR<2.0ns typical)

• Low capacitance(4pF@0V typical)

• Surface Mount Package ldeally Suited for Automatic lnsertion

• In compliance with EU RoHS 2002/95/EC directives

.110(2.8)

.098(2.5)

MECHANICALDATA

• Case: SOD-123 plastic case.

• Terminals : Solderable per MIL-STD-750,Method 2026

• Standard packaging: 8mm tape

• Weight: approximately 0.01g

• Marking : A4

.016(.40)MIN

.005(.12)MAX

ABSOLUTE RATINGS (TJ =25°C )

PARAMETER

SYMBOL

1N4150W

UNITS

Maximum Reverse Voltage

Peak Reverse Voltage

RRM

Maximum Average Forward Current

Non-repetitve Peak Forward Surge Current at t=1.0s

F(AV)

FSM

0.2

0.5

THERMALCHARACTERISTICS

PARAMETER

SYMBOL

1N4150W

410

UNITS

Power Dissipation (Note 1)

TOT

Thermal Resistance, Junction to Ambient (Note 1)

ΘJA

305

^oC/W

^oC

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 to 150

NOTE:

1. FR-4 Board = 70 x 60 x 1mm.

REV.0.1-FEB.5.2009

PAGE . 1

12 3

中文翻译

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与1N4150W_09相关器件

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1N4150W-G	VISHAY	获取价格	Small Signal Fast Switching Diode
1N4150W-G3-08	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, GREEN PACKAGE-2
1N4150W-HE3-08	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
1N4150W-HE3-18	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
1N4150W-T1	SENSITRON	获取价格	Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, PLASTIC PACKAGE-2
1N4150W-T1	WTE	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
1N4150W-T1-LF	WTE	获取价格	暂无描述
1N4150W-T3	WTE	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
1N4150W-V	VISHAY	获取价格	Small Signal Switching Diode
1N4150W-V_12	VISHAY	获取价格	Small Signal Switching Diode