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1N4151 PDF预览

1N4151

更新时间: 2024-09-16 22:52:07
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 43K
描述
Silicon Epitaxial Planar Diode

1N4151 数据手册

 浏览型号1N4151的Datasheet PDF文件第2页浏览型号1N4151的Datasheet PDF文件第3页浏览型号1N4151的Datasheet PDF文件第4页 
1N4151  
Vishay Telefunken  
Silicon Epitaxial Planar Diode  
Applications  
Extreme fast switches  
94 9367  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Repetitive peak reverse voltage  
Reverse voltage  
Test Conditions  
Type  
Symbol  
V
RRM  
Value  
75  
50  
Unit  
V
V
V
R
Peak forward surge current  
Repetitive peak forward current  
Forward current  
Average forward current  
Power dissipation  
t =1 s  
I
2
500  
300  
150  
440  
500  
175  
A
p
FSM  
I
mA  
mA  
mA  
mW  
mW  
C
FRM  
I
F
V =0  
I
R
FAV  
l=4mm, T =45 C  
l=4mm, T 25 C  
P
V
P
V
L
L
Junction temperature  
T
j
Storage temperature range  
T
stg  
–65...+175  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
l=4mm, T =constant  
Symbol  
R
thJA  
Value  
350  
Unit  
K/W  
L
www.vishay.de FaxBack +1-408-970-5600  
Document Number 85523  
Rev. 2, 01-Apr-99  
1 (4)  

1N4151 替代型号

型号 品牌 替代类型 描述 数据表
1N4151 DIOTEC

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