Datasheet > 1N4151D8/10K

1N4151D8/10K

更新时间： 2024-09-24 09:43:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	152K
描述
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM),

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1N4151D8/10K 数据手册

1N4151

Small-Signal Diode

DO-204AH (DO-35 Glass)

Features

• Silicon Epitaxial Planar Diode

• Fast switching diode

• This diode is also available in other case styles

including the SOD-123 case with the type

designation 1N4151W, and the MiniMELFcase with

the type designation LL4151.

Mechanical Data

Case: DO-35 Glass Case

Weight: approx. 0.13g

Packaging Codes/Options:

Dimensions in inches

and (millimeters)

D7/10K per 13” reel (52mm tape), 20K/box

D8/10K per Ammo tape (52mm tape), 20K/box

F2/10K per Ammo tape (52mm tape), 50K/box

F3/10K per 13” reel (52mm tape), 50K/box

Maximum Ratings and Thermal Characteristics (T_A= 25°C unless otherwise noted)

Parameter

Symbol

Limit

Unit

Reverse Voltage

Peak Reverse Voltage

V_R

V_RM

Average Rectified Current

Half Wave Rectification with Resistive Load

at Tamb = 25°C and f ≥ 50Hz

(1)

I_F(AV)

150

Surge Forward Current at t < 1s and T_j= 25°C

Power Dissipation at T_amb= 25°C

Thermal Resistance Junction to Ambient Air

Junction Temperature

I_FSM

P_tot

R_θJA

T_j

500

°C/W

°C

(1)

500

(1)

350

175

Storage Temperature Range

T_S

–65 to +175

°C

Electrical Characteristics (T_J= 25°C unless otherwise noted)

Parameter

Symbol

V_(BR)R

V_F

Test Condition

I_R= 5µA (pulsed)

I_F= 50mA

Min

Typ

Max

—

Unit

Reverse Breakdown Voltage

Forward Voltage

—

1.0

V_R= 50V

V_R= 50V, T_j= 150°C

—

µA

Leakage Current

Capacitance

I_R

C_tot

V_F= V_R= 0V

—

I_F= 10mA to I_R= 10mA

to I_R= 1mA

—

Reverse Recovery Time

Rectification Efficiency

t_rr

I_F= 10mA to I_R= 1mA

V_R= 6V, R_L= 100Ω

—

η_ν

f = 100MHz, V_RF= 2V

0.45

—

4/21/00

Note: (1) Valid provided that at a distance of 8 mm from case are kept at ambient temperature.

12 3

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