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1N4151D8/10K PDF预览

1N4151D8/10K

更新时间: 2024-12-01 09:43:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
3页 152K
描述
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM),

1N4151D8/10K 数据手册

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1N4151  
Small-Signal Diode  
DO-204AH (DO-35 Glass)  
Features  
• Silicon Epitaxial Planar Diode  
• Fast switching diode  
• This diode is also available in other case styles  
including the SOD-123 case with the type  
designation 1N4151W, and the MiniMELFcase with  
the type designation LL4151.  
Mechanical Data  
Case: DO-35 Glass Case  
Weight: approx. 0.13g  
Packaging Codes/Options:  
Dimensions in inches  
and (millimeters)  
D7/10K per 13” reel (52mm tape), 20K/box  
D8/10K per Ammo tape (52mm tape), 20K/box  
F2/10K per Ammo tape (52mm tape), 50K/box  
F3/10K per 13” reel (52mm tape), 50K/box  
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
V
Reverse Voltage  
Peak Reverse Voltage  
VR  
50  
VRM  
75  
V
Average Rectified Current  
Half Wave Rectification with Resistive Load  
at Tamb = 25°C and f 50Hz  
(1)  
IF(AV)  
150  
mA  
Surge Forward Current at t < 1s and Tj = 25°C  
Power Dissipation at Tamb = 25°C  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
IFSM  
Ptot  
RθJA  
Tj  
500  
mA  
mW  
°C/W  
°C  
(1)  
500  
(1)  
350  
175  
Storage Temperature Range  
TS  
–65 to +175  
°C  
Electrical Characteristics (TJ = 25°C unless otherwise noted)  
Parameter  
Symbol  
V(BR)R  
VF  
Test Condition  
IR = 5µA (pulsed)  
IF = 50mA  
Min  
75  
Typ  
Max  
Unit  
V
Reverse Breakdown Voltage  
Forward Voltage  
1.0  
V
VR = 50V  
VR = 50V, Tj = 150°C  
50  
50  
nA  
µA  
Leakage Current  
Capacitance  
IR  
Ctot  
VF = VR = 0V  
2
pF  
IF = 10mA to IR = 10mA  
to IR = 1mA  
4
Reverse Recovery Time  
Rectification Efficiency  
trr  
ns  
IF = 10mA to IR = 1mA  
VR = 6V, RL = 100Ω  
2
ην  
f = 100MHz, VRF = 2V  
0.45  
4/21/00  
Note: (1) Valid provided that at a distance of 8 mm from case are kept at ambient temperature.  

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