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1N4151TR PDF预览

1N4151TR

更新时间: 2024-02-03 09:04:45
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 信号二极管
页数 文件大小 规格书
2页 36K
描述
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM),

1N4151TR 技术参数

生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.61
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-LALF-W2JESD-609代码:e0
元件数量:1端子数量:2
最大输出电流:0.1 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:0.5 W认证状态:Not Qualified
最大重复峰值反向电压:75 V最大反向恢复时间:0.002 µs
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

1N4151TR 数据手册

 浏览型号1N4151TR的Datasheet PDF文件第2页 
1N4151  
DO-35  
Color Band Denotes Cathode  
Small Signal Diode  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VRRM  
IF(AV)  
IFSM  
Maximum Repetitive Reverse Voltage  
75  
V
Average Rectified Forward Current  
150  
mA  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
0.5  
2.0  
A
A
Pulse Width = 1.0 microsecond  
Storage Temperature Range  
-65 to +175  
C
Tstg  
TJ  
°
Operating Junction Temperature  
175  
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 200 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
500  
300  
mW  
RθJA  
C/W  
°
Electrical Characteristics TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max Units  
VR  
VF*  
IR*  
Breakdown Voltage  
75  
V
IR = 5.0 µA  
Forward Voltage  
Reverse Current  
IF = 50 mA  
1.0  
V
VR = 50 V  
VR = 50 V, TA = 150°C  
VR = 0 V , f = 1.0 MHz  
50  
50  
2.0  
nA  
µA  
pF  
CT  
trr1  
Total Capacitance  
Reverse Recovery Time  
IF = IR = 10 mA, IRR = 1.0 mA,  
RL = 100Ω  
4.0  
ns  
trr2  
Reverse Recovery Time  
IF = 10 mA, VR = 6.0 V,  
RL = 100Ω  
2.0  
ns  
*Pulse test : Pulse width=300us, Duty Cycle=2%  
2004 Fairchild Semiconductor Corporation  
1N4151, Rev. A  

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