Datasheet > 1N4151W

1N4151W

更新时间： 2024-12-01 12:53:35

品牌	Logo	应用领域
TYSEMI		二极管开关光电二极管
页数	文件大小	规格书
2页	90K
描述
Silicon Epitaxial Planar Diode Fast switching diods. Mini-MELF case with the type disignation LL4151.

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1N4151W 数据手册

Product specification

1N4151W

SOD-123

Unit: mm

+0.1

-0.1

+0.05

1.1

-0.05

2.7

Features

Silicon Epitaxial Planar Diode

+0.1

-0.1

3.7

0.1max

Fast switching diods.

0.50

This diods is also available in other case styles including:

the SOD-123 case with the type designation 1N4151W and

the Mini-MELF case with the type disignation LL4151.

0.35

Absolute Maxim um Ratings Ta = 25

Paramater

Reverse voktage

Symbol

V^R

Value

Unit

Peak reverse voktage

V^RM

Rectified current (Average)

Half wave rectification with resist.load

150⁽¹⁾

at Tamb = 25

and f

50Hz

I^FSM

P^tot

T^j

500

Surge forward current at t < 1 s and T^j= 25

Power dissipation at T^amb= 25

Junction temperature

410⁽¹⁾

150

Storage temperature range

NOTES::

-65 to+150

(1) Valid provided that electrodes are kept at ambient temperature

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

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