Datasheet > 1N4151WS

1N4151WS

更新时间： 2024-12-02 14:54:07

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	1026K
描述
Switching Diodes Switch detector

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1N4151WS 数据手册

1N4151WS

SURFACE MOUNT FAST SWITCHING DIODE

Features

Silicon Epitaxial Planar Diode

Fast switching diode

Mechanical Data

SOD-323

Dim

Min

2.30

1.75

1.15

0.25

0.05

0.70

0.30

Max

2.70

1.95

1.35

0.35

0.15

0.95

—

Case: SOD-323, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.004 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Parameter

Reverse voltage

Test condition

Symbol

V_R

Value

Unit

V_RM

Peak reverse voltage

Average rectified current half

wave rectification with resistive

load

150¹⁾

I_F(AV)

f ≥ 50 Hz

t < 1 s and T_j= 25 °C

I_FSM

P_tot

Surge current

500

410¹⁾

Power dissipation

¹⁾Valid provided that electrodes are kept at ambient temperature.

= 25 °C, unless otherwise specified

Thermal Characteristics

amb

Parameter

Test condition

Symbol

R_thJA

Value

450¹⁾

Unit

Thermal resistance junction to

ambient air

°C/W

T_j

Junction temperature

150

°C

T_stg

Storage temperature range

- 65 to + 150

¹⁾Valid provided that electrodes are kept at ambient temperature.

Electrical Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Forward voltage

Test condition

I_F= 50 mA

Symbol

V_F

Min.

Typ.

Max.

Unit

_R= 50 V

I_R

Leakage current

µA

V_R= 20 V, T_j= 150 °C

_R= 5 µA (pulsed)

V_F= V_R= 0 V

V_(BR)

Reverse breakdown voltage

Capacitance

I_F= 10 mA to I_R= 10 mA

to I_R= 1 mA

t_rr

Reverse recovery time

I_F= 10 mA to I_R= 1 mA,

t_rr

V_R= 6 V, R_L= 100 Ω

f = 100 MHz, V_RF= 2 V

Rectification efficiency

ην

0.45

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