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1N4151W-V_12 PDF预览

1N4151W-V_12

更新时间: 2024-11-12 07:21:15
品牌 Logo 应用领域
威世 - VISHAY 二极管开关
页数 文件大小 规格书
5页 70K
描述
Small Signal Fast Switching Diode

1N4151W-V_12 数据手册

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1N4151W-V  
Vishay Semiconductors  
Small Signal Fast Switching Diode  
Features  
• Silicon Epitaxial Planar Diode  
• Fast switching diode  
• This diode is also available in other case  
styles including the DO-35 case with the  
type designation 1N4151, and the  
MiniMELF case with the type designation  
LL4151.  
17431  
• AEC-Q101 qualified  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Mechanical Data  
Case: SOD-123  
Weight: approx. 10.3 mg  
Packaging codes/options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Ordering code  
Marking  
A5  
Remarks  
1N4151W-V  
1N4151W-V-GS18 or 1N4151W-V-GS08  
Tape and Reel  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
VR  
Value  
50  
Unit  
V
Reverse voltage  
VRM  
Peak reverse voltage  
75  
V
Average rectified current half  
wave rectification with resistive  
load  
1501)  
IF(AV)  
f 50 Hz  
mA  
t < 1 s and Tj = 25 °C  
IFSM  
Ptot  
Surge current  
500  
mA  
4101)  
Power dissipation  
mW  
1)Valid provided that electrodes are kept at ambient temperature.  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
Unit  
K/W  
Thermal resistance junction to  
ambient air  
450 1)  
150  
Tj  
Junction temperature  
°C  
°C  
Tstg  
Storage temperature range  
- 65 to 150  
1) Valid provided that electrodes are kept at ambient temperature.  
Document Number 85721  
Rev. 1.3, 17-Aug-10  
www.vishay.com  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
1

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