5秒后页面跳转
1N4152 PDF预览

1N4152

更新时间: 2024-02-01 11:37:10
品牌 Logo 应用领域
SYNSEMI 二极管开关
页数 文件大小 规格书
1页 72K
描述
HIGH SPEED SWITCHING DIODE

1N4152 技术参数

生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.66
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.88 V
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
最大非重复峰值正向电流:2 A元件数量:1
端子数量:2最高工作温度:200 °C
最低工作温度:-65 °C最大输出电流:0.15 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:40 V
最大反向电流:0.05 µA最大反向恢复时间:0.002 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N4152 数据手册

  
HIGH SPEED SWITCHING DIODE  
1N4152  
DO - 35 Glass  
(DO-204AH)  
FEATURES :  
• High switching speed: max. 4 ns  
• Peak reverse voltage:max. 40 V  
• Pb / RoHS Free  
1.00 (25.4)  
0.079(2.0 )max.  
min.  
0.150 (3.8)  
Cathode  
max.  
Mark  
1.00 (25.4)  
MECHANICAL DATA :  
Case: DO-35 Glass Case  
Weight: approx. 0.13g  
0.020 (0.52)max.  
min.  
Dimensions in inches and ( millimeters )  
Maximum Ratings and Thermal Characteristics (Ta = 25 °C unless otherwise noted)  
Parameter  
Maximum Peak Reverse Voltage  
Symbol  
VRM  
Value  
75  
Unit  
V
IF(AV)  
150  
Maximum Average Forward Current  
Maximum Non-repetitive Peak Forward Surge Current at tp = 1s  
mA  
1.0  
IFSM  
A
at tp =1 µs  
4.0  
RӨJA  
PD  
Thermal Resistance Junction to Ambient  
Maximum Power Dissipation  
300  
°C/W  
mW  
°C  
500  
TJ  
Operating Junction Temperature  
Storage Temperature Range  
175  
TSTG  
-65 to + 200  
°C  
Electrical Characteristics (Ta = 25 °C unless otherwise noted)  
Test Condition  
Min  
Typ  
Max  
Unit  
Parameter  
Symbol  
IR  
VR = 30 V  
-
-
-
-
-
-
-
-
-
-
-
50  
50  
nA  
µA  
Reverse Current  
VR = 30 V , Ta = 150 °C  
IF = 0.1 mA  
-
0.49  
0.53  
0.59  
0.62  
0.70  
0.74  
40  
0.55  
0.59  
0.67  
0.70  
0.81  
0.88  
-
IF = 0.25 mA  
IF = 1.0 mA  
VF  
Forward Voltage  
V
IF = 2.0 mA  
IF = 10 mA  
IF = 20 mA  
V(BR)R  
Cd  
IR = 5 µA  
Reverse Breakdown Voltage  
Diode Capacitance  
V
f = 1MHz ; VR = 0  
IF = IR = 10 mA,  
RL = 100 , Irr = 1mA  
IF = 10 mA , VR = 6 V,  
RL = 100 , Irr = 1 mA  
-
2.0  
pF  
Trr1  
Trr2  
-
-
-
-
4
2
ns  
ns  
Reverse Recovery Time  
Page 1 of 1  
Rev. 01 : May 9, 2006  

与1N4152相关器件

型号 品牌 描述 获取价格 数据表
1N4152.TR TI DIODE 40 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode

获取价格

1N4152B NJSEMI Diode Switching 40V 0.15A 2-Pin DO-35

获取价格

1N4152HC ROHM Rectifier Diode, 1 Element, 0.15A, 40V V(RRM), Silicon, DO-35

获取价格

1N4152HE ROHM Rectifier Diode, 1 Element, 0.15A, 40V V(RRM), Silicon, DO-35

获取价格

1N4152HO ROHM Rectifier Diode, 1 Element, 0.15A, 40V V(RRM), Silicon, DO-35

获取价格

1N4152R MICROSEMI Rectifier Diode, 1 Element, 0.1A, 75V V(RRM), Silicon,

获取价格