1N4151W-T1

更新时间： 2024-09-25 22:13:27

品牌	Logo	应用领域
WTE		整流二极管开关光电二极管
页数	文件大小	规格书
2页	32K
描述
SURFACE MOUNT FAST SWITCHING DIODE

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中文翻译

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数据手册

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1N4151W-T1 数据手册

WTE

POWER SEMICONDUCTORS

1N4150W / 1N4151W

SURFACE MOUNT FAST SWITCHING DIODE

Features

High Conductance

Fast Switching Speed

Surface Mount Package Ideally Suited for

Automatic Insertion

For General Purpose Switching Application

Plastic Material – UL Recognition Flammability

Classification 94V-O

SOD-123

Dim

Min

3.6

2.5

1.4

0.5

—

Max

3.9

2.8

1.8

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

0.7

0.2

0.4

0.95

—

Mechanical Data

1.35

0.12

Case: SOD-123, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.01 grams (approx.)

Marking: 1N4150W A4

All Dimensions in mm

1N4151W

Maximum Ratings ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

1N4150W

1N4151W

Unit

Non-Repetitive Peak Reverse Voltage

V^RM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

RMS Reverse Voltage

V^R(RMS)

I^FM

Forward Continuous Current (Note 1)

Average Rectified Output Current (Note 1)

400

200

300

150

I^O

Non-Repetitive Peak Forward Surge Current

@ t = 1.0µs

@ t = 1.0s

4.0

1.0

2.0

0.5

I^FSM

Power Dissipation (Note 1)

P^d

410

500

K/W

°C

Typical Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

R^ꢀ^JA

300

-65 to +150

T^j, T^STG

Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Forward Voltage Drop (Note 4)

Peak Reverse Leakage Current

Symbol

1N4150W

1N4151W

Unit

V^FM

I^RM

C^j

1.0

@ V^R= 50V

100

2.5

4.0

2.0

Typical Junction Capacitance (V^R= 0V DC, f = 1.0MHz)

Reverse Recovery Time (Note 2, 3)

t^rr

Note: 1. Valid provided that terminals are kept at ambient temperature.

2. 1N4150W: Measured with I^F= I^R= 200mA, I^RR= 0.1 x I^R, R^L= 100ꢀ.

3. 1N4151W: Measured with I^F= I^R= 10mA, I^RR= 1.0 x I^R, R^L= 100ꢀ.

4. 1N4150W: Measured with I^F= 200mA. 1N4151W: Measured with I^F= 10mA

1N4150W / 1N4151W

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与1N4151W-T1相关器件

型号	品牌	获取价格	描述	数据表
1N4151W-T1-LF	WTE	获取价格	Rectifier Diode, 1 Element, 0.15A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
1N4151W-T3	WTE	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
1N4151W-TP	MCC	获取价格	Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, SOD-123, 2 PIN
1N4151W-V	VISHAY	获取价格	Small Signal Fast Switching Diode
1N4151W-V_12	VISHAY	获取价格	Small Signal Fast Switching Diode
1N4151W-V-GS08	VISHAY	获取价格	Small Signal Fast Switching Diode
1N4151W-V-GS18	VISHAY	获取价格	Small Signal Fast Switching Diode
1N4151X	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.1A, 75V V(RRM), Silicon,
1N4152	SEMTECH	获取价格	SILICON EPITAXIAL PLANAR DIODE
1N4152	LUNSURE	获取价格	SMALL SIGNAL SWITCHING DIODE