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1N4151W PDF预览

1N4151W

更新时间: 2024-11-12 20:02:31
品牌 Logo 应用领域
SENSITRON 光电二极管
页数 文件大小 规格书
3页 137K
描述
Rectifier Diode, 1 Element, 0.15A, 50V V(RRM), Silicon, PLASTIC PACKAGE-2

1N4151W 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred包装说明:PLASTIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.11配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G2湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向恢复时间:0.002 µs表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N4151W 数据手册

 浏览型号1N4151W的Datasheet PDF文件第2页浏览型号1N4151W的Datasheet PDF文件第3页 
SENSITRON  
1N4150W / 1N4151W  
SEMICONDUCTOR  
Data Sheet 2772, Rev. -  
Features  
SURFACE MOUNT FAST SWITCHING DIODE  
High Conductance  
Fast Switching Speed  
A
SOD-123  
Surface Mount Package Ideally Suited for  
Automatic Insertion  
For General Purpose Switching Application  
Plastic Material – UL Recognition Flammability  
Classification 94V-O  
Dim Min Max Min Max  
A
B
C
D
E
G
H
J
3.6  
2.5  
1.4  
0.5  
3.9 0.14 0.154  
2.8 0.098 0.110  
1.8 0.055 0.070  
0.7 0.020 0.028  
C
D
B
0.2  
0.008  
E
0.4  
0.016  
0.95 1.35 0.037 0.053  
0.12 0.005  
In mm In inch  
Mechanical Data  
H
Case: SOD-123, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 0.01 grams (approx.)  
Marking: 1N4150W A4  
G
J
1N4151W  
A5  
Maximum Ratings @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
1N4150W  
1N4151W  
Unit  
Non-Repetitive Peak Reverse Voltage  
VRM  
50  
75  
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
V
RMS Reverse Voltage  
VR(RMS)  
IFM  
35  
V
Forward Continuous Current (Note 1)  
Average Rectified Output Current (Note 1)  
Non-Repetitive Peak Forward Surge Current  
400  
200  
300  
150  
mA  
mA  
IO  
@ t = 1.0µs  
@ t = 1.0s  
4.0  
1.0  
2.0  
0.5  
IFSM  
A
Power Dissipation (Note 1)  
Pd  
410  
500  
mW  
K/W  
°C  
Typical Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
RθJA  
300  
Tj, TSTG  
-65 to +150  
Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Forward Voltage Drop (Note 4)  
Peak Reverse Leakage Current  
Symbol  
1N4150W  
1N4151W  
Unit  
VFM  
IRM  
Cj  
1.0  
V
@ VR = 50V  
100  
2.5  
4.0  
50  
2.0  
2.0  
nA  
pF  
nS  
Typical Junction Capacitance (VR = 0V DC, f = 1.0MHz)  
Reverse Recovery Time (Note 2, 3)  
trr  
Note: 1. Valid provided that terminals are kept at ambient temperature.  
2. 1N4150W: Measured with IF = IR = 200mA, IRR = 0.1 x IR, RL = 100Ω.  
3. 1N4151W: Measured with IF = IR = 10mA, IRR = 1.0 x IR, RL = 100Ω.  
4. 1N4150W: Measured with IF = 200mA. 1N4151W: Measured with IF = 10mA  
221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  

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