1N4150W-V

更新时间： 2024-11-07 06:18:27

品牌	Logo	应用领域
威世 - VISHAY		小信号开关二极管
页数	文件大小	规格书
4页	122K
描述
Small Signal Switching Diode

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中文翻译

获取价格

数据手册

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1N4150W-V 数据手册

1N4150W-V

Vishay Semiconductors

Small Signal Switching Diode

Features

• Silicon Epitaxial Planar Diode

• For general purpose and switching

• This diode is also available in other case

styles including the DO-35 case with the type des-

ignation 1N4150, and the MiniMELF case with the

type designation LL4150.

17431

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Mechanical Data

Case: SOD-123 Plastic case

Weight: approx. 9.3 mg

Packaging Codes/Options:

GS18 / 10 k per 13" reel (8 mm tape), 10 k/box

GS08 / 3 k per 7" reel (8 mm tape), 15 k/box

Parts Table

Part

Ordering code

Marking

Remarks

Tape and reel

1N4150W-V

1N4150W-V-GS18 or 1N4150W-V-GS08

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

V_RM

Value

Unit

Peak reverse voltage

Maximum average forward

rectified current

I_F(AV)

200

410¹⁾

Maximum power dissipation

T_amb= 25 °C

P_tot

¹⁾Valid provided that electrodes are kept at ambient temperature.

Thermal Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

T_j

Value

150

Unit

°C

Maximum junction temperature

Storage temperature range

T_S

- 65 to + 150

°C

Document Number 85720

Rev. 1.2, 21-Jul-05

www.vishay.com

12 3 4

中文翻译

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1N4150W-V_12	VISHAY	获取价格	Small Signal Switching Diode
1N4150W-V-GS08	VISHAY	获取价格	Small Signal Switching Diode
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1N4151	MICROSEMI	获取价格	COMPUTER DIODE Switching
1N4151	SEMTECH	获取价格	SILICON EPITAXIAL PLANAR DIODE
1N4151	DCCOM	获取价格	TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES
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