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1N4150W-V-GS18 PDF预览

1N4150W-V-GS18

更新时间: 2024-11-07 06:18:27
品牌 Logo 应用领域
威世 - VISHAY 信号二极管小信号开关二极管光电二极管
页数 文件大小 规格书
4页 122K
描述
Small Signal Switching Diode

1N4150W-V-GS18 技术参数

是否无铅:不含铅生命周期:Obsolete
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.32
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.41 W认证状态:Not Qualified
最大重复峰值反向电压:50 V最大反向恢复时间:0.004 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

1N4150W-V-GS18 数据手册

 浏览型号1N4150W-V-GS18的Datasheet PDF文件第2页浏览型号1N4150W-V-GS18的Datasheet PDF文件第3页浏览型号1N4150W-V-GS18的Datasheet PDF文件第4页 
1N4150W-V  
Vishay Semiconductors  
Small Signal Switching Diode  
Features  
• Silicon Epitaxial Planar Diode  
• For general purpose and switching  
e3  
• This diode is also available in other case  
styles including the DO-35 case with the type des-  
ignation 1N4150, and the MiniMELF case with the  
type designation LL4150.  
17431  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Mechanical Data  
Case: SOD-123 Plastic case  
Weight: approx. 9.3 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Ordering code  
Marking  
Remarks  
Tape and reel  
1N4150W-V  
1N4150W-V-GS18 or 1N4150W-V-GS08  
A4  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VRM  
Value  
50  
Unit  
V
Peak reverse voltage  
Maximum average forward  
rectified current  
IF(AV)  
200  
mA  
4101)  
Maximum power dissipation  
Tamb = 25 °C  
Ptot  
mW  
1) Valid provided that electrodes are kept at ambient temperature.  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Tj  
Value  
150  
Unit  
°C  
Maximum junction temperature  
Storage temperature range  
TS  
- 65 to + 150  
°C  
Document Number 85720  
Rev. 1.2, 21-Jul-05  
www.vishay.com  
1

1N4150W-V-GS18 替代型号

型号 品牌 替代类型 描述 数据表
1N4150W-V-GS08 VISHAY

类似代替

Small Signal Switching Diode
1N4150W-G3-08 VISHAY

功能相似

Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, GREEN PACKAGE-2

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