Datasheet > 1N4151

1N4151

更新时间： 2024-09-17 04:24:11

品牌	Logo	应用领域
固锝 - GOOD-ARK		信号二极管开关
页数	文件大小	规格书
3页	165K
描述
Small-Signal Diode Fast Switching Diode

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1N4151 数据手册

1N4151

Small-Signal Diode

Fast Switching Diode

Features

ꢀ Silicon Epitaxial Planar Diode

ꢀ Fast switching diode

ꢀ This diode is also available in other case styles including the

MiniMELF case with the type designation LL4151.

Mechanical Data

ꢀ Case: DO-34, DO-35 Glass Case

ꢀ Weight: approx. 0.13g

Maximum Ratings and Thermal Characteristics

(T_A=25^oC unless otherwise noted.)

Parameter

Symbol

Limit

Unit

Reverse voltage

V_R

Volts

Peak reverse voltage

V_RM

Average rectified current

half wave rectification with resistive load at

I_F(AV)

150

_amb=25^oC and f>50Hz ⁽¹⁾

Surge forward current at t<1s and T=25^oC

I_FSM

P_tot

500

^oC/W

^oC

(1)

Power dissipation at T_amb=25^oC

Thermal resistance junction to ambient air ⁽¹⁾

Junction temperature

R_θJA

350

175

Storage temperature range

T_S

-65 to +175

^oC

Electrical Characteristics

(T_J=25^oC unless otherwise noted.)

Parameter

Symbol

V_(BR)R

V_F

Test Condition

Min.

Typ.

Max.

Unit

Reverse breakdown voltage

Forward voltage

I_R=5uA (pulsed)

Volts

Volt

I_F=50mA

1.0

V_R=50V

Leakage current

Capacitance

I_R

V_R=50V, T_J=150^OC

C_tot

V_F=V_R=0V

2.0

I_F=10mA to I_R=10mA

to I_R=1mA

I_F=10mA to I_R=1mA

V_R=6V, R_L=100Ω

4.0

2.0

Reverse recovery time

t_rr

Rectification efficiency

ην

f=100MHz, V_RF=2V

0.45

Notes:

1. Valid provided that leads at a distance of 8mm from case are kept at ambient temperature

619

12 3

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