Datasheet > 1N4150W-V_12

1N4150W-V_12

更新时间： 2024-09-17 07:21:15

品牌	Logo	应用领域
威世 - VISHAY		小信号开关二极管
页数	文件大小	规格书
3页	54K
描述
Small Signal Switching Diode

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数据手册

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1N4150W-V_12 数据手册

1N4150W-V

Vishay Semiconductors

Small Signal Switching Diode

Features

• Silicon Epitaxial Planar Diode

• For general purpose and switching

• This diode is also available in other case

styles including the DO-35 case with the

type designation 1N4150, and the

MiniMELF case with the type designation

LL4150.

17431

• AEC-Q101 qualified

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Mechanical Data

Case: SOD-123

Weight: approx. 9.3 mg

Packaging codes/options:

GS18 / 10 k per 13" reel (8 mm tape), 10 k/box

GS08 / 3 k per 7" reel (8 mm tape), 15 k/box

Parts Table

Part

Ordering code

Marking

Remarks

1N4150W-V

1N4150W-V-GS18 or 1N4150W-V-GS08

Tape and reel

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

V_RM

Value

Unit

Peak reverse voltage

Maximum average forward

rectified current

I_F(AV)

P_tot

200

410¹⁾

Maximum power dissipation

¹⁾Valid provided that electrodes are kept at ambient temperature.

Thermal Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

T_j

Value

150

Unit

°C

Maximum junction temperature

Storage temperature range

T_S

- 65 to + 150

°C

Document Number 85720

Rev. 1.3, 17-Aug-10

www.vishay.com

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

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