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1N4150W-HE3-18 PDF预览

1N4150W-HE3-18

更新时间: 2024-09-17 14:49:23
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
3页 79K
描述
Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2

1N4150W-HE3-18 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:10 weeks风险等级:5.1
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.41 W
参考标准:AEC-Q101最大重复峰值反向电压:50 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

1N4150W-HE3-18 数据手册

 浏览型号1N4150W-HE3-18的Datasheet PDF文件第2页浏览型号1N4150W-HE3-18的Datasheet PDF文件第3页 
1N4150W  
Vishay Semiconductors  
www.vishay.com  
Small Signal Fast Switching Diode  
FEATURES  
• Silicon epitaxial planar diode  
• For general purpose and switching  
• AEC-Q101 qualified  
• Base P/N-E3 - RoHS-compliant, commercial  
grade  
• Base P/N-HE3 - RoHS-compliant, AEC-Q101  
qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: SOD-123  
Weight: approx. 10.3 mg  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
PART  
ORDERING CODE  
TYPE MARKING  
INTERNAL CONSTRUCTION  
REMARKS  
1N4150W-E3-08 or 1N4150W-E3-18  
1N4150W-HE3-08 or 1N4150W-HE3-18  
1N4150W  
A4  
Single diode  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
50  
UNIT  
V
Repetitive peak reverse voltage  
Maximum average forward rectified current  
Maximum power dissipation (1)  
VRRM  
IF(AV)  
200  
mA  
mW  
Ptot  
410  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
375  
UNIT  
K/W  
°C  
(1)  
Thermal resistance junction to ambient air  
Maximum junction temperature  
Storage temperature range  
Operating temperature range  
150  
Tstg  
- 65 to + 150  
- 55 to + 150  
°C  
Top  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature.  
Rev. 1.4, 08-May-13  
Document Number: 85720  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

1N4150W-HE3-18 替代型号

型号 品牌 替代类型 描述 数据表
1N4150W-HE3-08 VISHAY

完全替代

Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2

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