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1N4150W

更新时间： 2024-11-15 14:46:55
品牌 Logo 应用领域
森美特 - SUNMATE /
页数 文件大小 规格书
1页 696K
描述
Switching Diodes Switch detector

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中文翻译

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1N4150W 数据手册

  
1N4150W - 1N4151W  
SURFACE MOUNT FAST SWITCHING DIODE  
Features  
! High Conductance  
! Fast Switching Speed  
! Surface Mount Package Ideally Suited for  
B
Automatic Insertion  
! For General Purpose Switching Application  
C
E
SOD-123FL  
Mechanical Data  
Case  
: SOD-123FL  
Dim Min Max  
Typ  
3.58 3.72 3.65  
2.72 2.78 2.75  
1.77 1.83 1.80  
1.02 1.08 1.05  
0.097 1.03 1.00  
0.13 0.17 0.15  
0.53 0.57 0.55  
A
B
C
D
E
H
L
!
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
plastic body over passivated junction  
D
Terminals  
!
!
: Plated axial leads,  
H
Method 2026  
solderable per MIL-STD-750,  
L
Polarity  
Mounting Position  
!
!
: Color band denotes cathode end  
All Dimensions in mm  
: Any  
E
Weight:0.0007 ounce, 0.02 grams  
!
A
Maximum Ratings @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
1N4150W  
1N4151W  
Unit  
RM  
Non-Repetitive Peak Reverse Voltage  
V
50  
75  
V
RRM  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RWM  
50  
35  
V
R
V
R(RMS)  
RMS Reverse Voltage  
V
V
FM  
Forward Continuous Current (Note 1)  
Average Rectified Output Current (Note 1)  
Non-Repetitive Peak Forward Surge Current  
I
400  
200  
300  
150  
mA  
mA  
O
I
@ t = 1.0µs  
@ t = 1.0s  
4.0  
1.0  
2.0  
0.5  
FSM  
I
A
d
Power Dissipation (Note 1)  
P
410  
500  
mW  
K/W  
°C  
Typical Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
R
ꢀ
JA  
300  
j
STG  
T, T  
-65 to +150  
Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Forward Voltage Drop (Note 4)  
Peak Reverse Leakage Current  
Symbol  
1N4150W  
1N4151W  
Unit  
FM  
V
1.0  
V
R
RM  
@ V = 50V  
I
100  
2.5  
4.0  
50  
2.0  
2.0  
nA  
pF  
nS  
R
j
Typical Junction Capacitance (V = 0V DC, f = 1.0MHz)  
Reverse Recovery Time (Note 2, 3)  
C
rr  
t
Note: 1. Valid provided that terminals are kept at ambient temperature.  
2. 1N4150W: Measured with IF = IR = 200mA, IRR = 0.1 x IR, RL = 100ꢀ.  
3. 1N4151W: Measured with IF = IR = 10mA, IRR = 1.0 x IR, RL = 100ꢀ.  
4. 1N4150W: Measured with IF = 200mA. 1N4151W: Measured with IF = 10mA  
www.sunmate.tw  
1 of 1  
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中文翻译

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