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1N4150-TP PDF预览

1N4150-TP

更新时间: 2024-11-14 13:03:31
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
2页 351K
描述
Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35, ROHS COMPLIANT PACKAGE-2

1N4150-TP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:DO-35
包装说明:ROHS COMPLIANT PACKAGE-2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.57
Is Samacsys:N其他特性:LOW LEAKAGE CURRENT
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-35JESD-30 代码:O-XALF-W2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最大输出电流:0.2 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.5 W
认证状态:Not Qualified最大反向恢复时间:0.004 µs
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N4150-TP 数据手册

 浏览型号1N4150-TP的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
1N4150  
Features  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
Low Current Leakage  
Compression Bond Construction  
Low Cost  
Marking : Cathode band and type number  
·
500mW 75 Volt Silicon  
Epitaxial Diode  
·
Moisture Sensitivity Level 1  
DO-35  
Maximum Ratings  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 300°C/W Junction To Ambient  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
D
Reverse Voltage  
VR  
50V  
IR=5.0μA  
Breakdown Voltage  
BV  
75V  
Average Rectified  
Current  
A
IO  
200mA  
500mW  
Cathode  
Mark  
Power Dissipation  
PTOT  
IFSM  
B
Peak Forward Surge  
Current  
1.0A  
4.0A  
Pulse Width=1.0S  
Pulse Width=1.0µS  
D
Maximum  
Instantaneous  
Forward Voltage  
IFM = 100mA;  
TJ = 25°C*  
VF  
1.0V  
C
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VR=50Volts  
TJ = 25°C  
TJ = 150°C  
100nA  
100µA  
IR  
DIMENSIONS  
INCHES  
MIN  
---  
---  
---  
MM  
MIN  
---  
---  
---  
25.40  
Maximum Junction  
Capacitance  
Measured at 1.0MHz,  
VR=0  
CJ  
Trr  
2.5pF  
4.0nS  
DIM  
A
B
C
D
MAX  
.166  
.079  
.020  
---  
MAX  
4.2  
2.00  
.52  
NOTE  
IF=10mA  
VR=6.0V  
RL=100Ω  
1.000  
---  
Maximum Reverse  
Recovery Time  
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 5.  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 2  

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