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1N4150-TR PDF预览

1N4150-TR

更新时间: 2024-11-14 06:18:11
品牌 Logo 应用领域
威世 - VISHAY 整流二极管开关
页数 文件大小 规格书
4页 114K
描述
Small Signal Fast Switching Diodes

1N4150-TR 数据手册

 浏览型号1N4150-TR的Datasheet PDF文件第2页浏览型号1N4150-TR的Datasheet PDF文件第3页浏览型号1N4150-TR的Datasheet PDF文件第4页 
1N4150  
Vishay Semiconductors  
Small Signal Fast Switching Diodes  
Features  
• Silicon Epitaxial Planar Diode  
• Low forward voltage drop  
e2  
• High forward current capability  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
94 9367  
Applications  
• High speed switch and general purpose use in  
computer and industrial applications  
Mechanical Data  
Case: DO35 Glass case  
Weight: approx. 125 mg  
Cathode Band Color: black  
Packaging Codes/Options:  
TR/10 k per 13" reel (52 mm tape), 50 k/box  
TAP/10 k per Ammopack (52 mm tape), 50 k/box  
Parts Table  
Part  
Ordering code  
Type Marking  
1N4150  
Remarks  
1N4150  
1N4150-TR or 1N4150-TAP  
Tape and Reel/Ammopack  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
50  
Unit  
V
Repetitive peak reverse voltage  
Reverse voltage  
VRRM  
VR  
50  
4
V
Peak forward surge current  
Average peak forward current  
Forward continuous current  
Average forward current  
Power dissipation  
tp = 1 µs  
IFSM  
IFRM  
IF  
A
600  
300  
150  
440  
500  
mA  
mA  
mA  
mW  
mW  
VR = 0  
IFAV  
Ptot  
Ptot  
l = 4 mm, TL = 45 °C  
l = 4 mm, TL 25 °C  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
K/W  
Thermal resistance junction to ambient air l = 4 mm, TL = constant  
Junction temperature  
RthJA  
Tj  
350  
175  
°C  
°C  
Storage temperature range  
Tstg  
- 65 to + 175  
Document Number 85522  
Rev. 1.7, 16-Feb-07  
www.vishay.com  
1

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