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11DQ09TR PDF预览

11DQ09TR

更新时间: 2024-11-09 06:25:31
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
5页 79K
描述
Schottky Rectifier, 1.1 A

11DQ09TR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.5
Is Samacsys:N其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.68 V
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:85 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:1.1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:90 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

11DQ09TR 数据手册

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11DQ09, 11DQ10  
Vishay High Power Products  
Schottky Rectifier, 1.1 A  
FEATURES  
• Low profile, axial leaded outline  
• High frequency operation  
• Very low forward voltage drop  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
Cathode  
Anode  
• Guard ring for enhanced ruggedness and long term  
reliability  
DO-204AL  
• Lead (Pb)-free plating  
• Designed and qualified for industrial level  
DESCRIPTION  
PRODUCT SUMMARY  
The 11DQ.. axial leaded Schottky rectifier has been  
optimized for very low forward voltage drop, with moderate  
leakage. Typical applications are in switching power  
supplies, converters, freewheeling diodes, and reverse  
battery protection.  
IF(AV)  
1.1 A  
90/100 V  
VR  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
1.1  
UNITS  
Rectangular waveform  
A
V
90/100  
85  
tp = 5 µs sine  
1 Apk, TJ = 25 °C  
Range  
A
VF  
0.85  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
11DQ09  
11DQ10  
100  
UNITS  
Maximum DC reverse voltage  
90  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
See fig. 4  
IF(AV)  
50 % duty cycle at TC = 75 °C, rectangular waveform  
1.1  
85  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 6  
Following any rated load  
condition and with rated  
5 µs sine or 3 µs rect. pulse  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 0.5 A, L = 8 mH  
14  
V
RRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
1.0  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.5  
Document Number: 93207  
Revision: 06-Nov-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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