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11DQ10TR-M3 PDF预览

11DQ10TR-M3

更新时间: 2024-12-01 07:25:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 113K
描述
Schottky Rectifier, 1.1 A

11DQ10TR-M3 数据手册

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VS-11DQ09, VS-11DQ09-M3, VS-11DQ10, VS-11DQ10-M3  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 1.1 A  
FEATURES  
• Low profile, axial leaded outline  
• High frequency operation  
• Very low forward voltage drop  
Cathode  
Anode  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
DO-204AL  
• Guard ring for enhanced ruggedness and long  
term reliability  
PRODUCT SUMMARY  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified for commercial level  
Package  
DO-204AL (DO-41)  
1.1 A  
IF(AV)  
• Halogen-free according to IEC 61249-2-21 definition  
(-M3 only)  
VR  
90 V, 100 V  
VF at IF  
IRM  
See Electrical table  
1.0 mA at 125 °C  
150 °C  
DESCRIPTION  
TJ max.  
Diode variation  
The VS-11DQ... axial leaded Schottky rectifier has been  
optimized for very low forward voltage drop, with moderate  
leakage. Typical applications are in switching power  
supplies, converters, freewheeling diodes, and reverse  
battery protection.  
Single die  
EAS  
1.0 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
1.1  
UNITS  
Rectangular waveform  
A
V
90/100  
85  
tp = 5 μs sine  
1 Apk, TJ = 25 °C  
Range  
A
VF  
0.85  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-11DQ09  
VS-11DQ09-M3  
VS-11DQ10  
VS-11DQ10-M3 UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
90  
90  
100  
100  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
See fig. 4  
IF(AV)  
50 % duty cycle at TC = 75 °C, rectangular waveform  
1.1  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 6  
Followinganyratedload  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
85  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 0.5 A, L = 8 mH  
14  
VRRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
1.0  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.5  
Revision: 21-Sep-11  
Document Number: 93207  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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*高密度和低型面符合锁定引脚*双U形槽ID截面*拉力解除装置