11DQ10TRPBF

更新时间： 2024-02-22 21:52:33

品牌	Logo	应用领域
威世 - VISHAY		整流二极管
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6页	113K
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11DQ10TRPBF 数据手册

VS-11DQ09, VS-11DQ09-M3, VS-11DQ10, VS-11DQ10-M3

www.vishay.com

Vishay Semiconductors

Schottky Rectifier, 1.1 A

FEATURES

• Low profile, axial leaded outline

• High frequency operation

• Very low forward voltage drop

Cathode

Anode

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

DO-204AL

• Guard ring for enhanced ruggedness and long

term reliability

PRODUCT SUMMARY

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for commercial level

Package

DO-204AL (DO-41)

1.1 A

I_F(AV)

• Halogen-free according to IEC 61249-2-21 definition

(-M3 only)

V_R

90 V, 100 V

V_Fat I_F

I_RM

See Electrical table

1.0 mA at 125 °C

150 °C

DESCRIPTION

T_Jmax.

Diode variation

The VS-11DQ... axial leaded Schottky rectifier has been

optimized for very low forward voltage drop, with moderate

leakage. Typical applications are in switching power

supplies, converters, freewheeling diodes, and reverse

battery protection.

Single die

E_AS

1.0 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

1.1

UNITS

Rectangular waveform

90/100

t_p= 5 μs sine

1 Apk, T_J= 25 °C

Range

V_F

0.85

T_J

- 40 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-11DQ09

VS-11DQ09-M3

VS-11DQ10

VS-11DQ10-M3 UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_R

100

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

See fig. 4

I_F(AV)

50 % duty cycle at T_C= 75 °C, rectangular waveform

1.1

Maximum peak one cycle

non-repetitive surge current

See fig. 6

Followinganyratedload

condition and with rated

5 μs sine or 3 μs rect. pulse

I_FSM

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 0.5 A, L = 8 mH

V_RRMapplied

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

1.0

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

0.5

Revision: 21-Sep-11

Document Number: 93207

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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