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11DQ10 PDF预览

11DQ10

更新时间: 2024-02-08 02:07:05
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SYNSEMI 整流二极管
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2页 33K
描述
SCHOTTKY BARRIER RECTIFIER DIODES

11DQ10 数据手册

 浏览型号11DQ10的Datasheet PDF文件第2页 
SCHOTTKY BARRIER  
RECTIFIER DIODES  
11DQ03 - 11DQ10  
PRV : 30 - 100 Volts  
IO : 1.1 Ampere  
DO - 41  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
1.00 (25.4)  
MIN.  
0.107 (2.74)  
0.080 (2.03)  
* High efficiency  
* Low power loss  
* Low forward voltage drop  
* Low cost  
0.205 (5.20)  
0.160 (4.10)  
* Pb / RoHS Free  
1.00 (25.4)  
MIN.  
0.034 (0.86)  
0.028 (0.71)  
MECHANICAL DATA :  
* Case : DO-41 Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
Dimensions in inches and ( millimeters )  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 0.339 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specifie.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL 11DQ03 11DQ04 11DQ05 11DQ06 11DQ09 11DQ10 UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
30  
21  
30  
40  
28  
40  
50  
35  
50  
60  
42  
60  
90  
63  
90  
100  
70  
V
V
Maximum DC Blocking Voltage  
100  
V
IF(AV)  
TC  
1.1  
84  
A
Maximum Average Forward Current  
75  
42  
75  
42  
°C  
Maximum Peak Forward Surge Current  
IFSM  
26  
A
V
single half sine wave superimposed on rated load  
0.55  
0.71  
1.0  
0.58  
0.76  
1.0  
0.85  
0.96  
0.5  
Maximum Forward Voltage  
at I F = 1 A, TJ = 25°C  
at IF = 2 A, TJ = 25°C  
TJ = 25°C  
VF  
IR  
IR(H)  
TJ  
Maximum Reverse Current at  
Rated DC Blocking Voltage  
Junction Temperature Range  
Storage Temperature Range  
mA  
1.0  
6.0  
11  
T J = 125°C  
- 40 to + 150  
- 40 to + 150  
°C  
°C  
TSTG  
Page 1 of 2  
Rev. 04 : October 10, 2005  

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