Datasheet > AAT7357ITS-T1

AAT7357ITS-T1

更新时间： 2025-08-07 06:35:51

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AAT		/
页数	文件大小	规格书
6页	191K
描述
20V P-Channel Power MOSFET

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技术参数
数据手册

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AAT7357ITS-T1 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	Is Samacsys：	N
湿度敏感等级：	1	Base Number Matches：	1

AAT7357ITS-T1 数据手册

AAT7357

20V P-Channel Power MOSFET

General Description

Features

The AAT7357 is a low threshold dual P-channel

MOSFET designed for the battery, cell phone, and

PDA markets. Using AnalogicTech's ultra-high-

density MOSFET process and space-saving,

small-outline, J-lead package, performance superi-

or to that normally found in a TSSOP-8 footprint

has been squeezed into the footprint of a

TSOPJW-8 package.

•

Drain-Source Voltage (max): -20V

Contiunous Drain Current¹(max) = -5A @ 25°C

Low On-Resistance:

— 39mΩ @ V_GS= -4.5V

— 63mΩ @ V_GS= -2.5V

Dual TSOPJW-8 Package

Top View

D1 D1 D2 D2

Applications

•

Battery Packs

Battery-Powered Portable Equipment

Cellular and Cordless Telephones

S1 G1 S2 G2

Absolute Maximum Ratings

T_A= 25°C, unless otherwise noted.

Symbol

Description

Value

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

-20

±12

T_A= 25°C

T_A= 70°C

±5

I_D

Continuous Drain Current @ T_J= 150°C¹

±4

I_DM

I_S

Pulsed Drain Current²

Continuous Source Current (Source-Drain Diode)¹

±12

-1.3

T_A= 25°C

T_A= 70°C

1.6

P_D

Maximum Power Dissipation¹

1.0

T_J

Operating Junction Temperature Range

Storage Temperature Range

-55 to 150

°C

T_STG

Thermal Characteristics¹

Symbol

Description

Typ

Max

Units

R_θJA

R_θJA2

R_θJF

Junction-to-Ambient Steady State, One FET On

Junction-to-Ambient t<5 Seconds

Junction-to-Foot

115

140

°C/W

1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a

1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R_θJF+ R_θFA= R_θJAwhere the

foot thermal reference is defined as the normal solder mounting surface of the device's leads. R_θJFis guaranteed by design; however,

R_θCAis determined by the PCB design. Actual maximum continuous current is limited by the application's design.

2. Pulse test: Pulse Width = 300µs.

7357.2005.04.1.0

12 3 4 5 6

中文翻译

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