AAT8343
20V P-Channel Power MOSFET
General Description
Features
The AAT8343 is a low threshold P-channel MOS-
FET designed for the battery, cell phone, and PDA
markets. Using AnalogicTech's ultra-high-density
proprietary TrenchDMOS™ technology, this product
demonstrates high power handling and small size.
•
•
Drain-Source Voltage (max): -20V
Continuous Drain Current1 (max):
-4.5A @ 25°C
Low On-Resistance:
— 60mΩ @ VGS = -4.5V
— 110mΩ @ VGS = -2.5V
•
Applications
TSOP-6 Package
•
•
•
Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones
Top View
D
6
D
S
4
5
1
2
3
Absolute Maximum Ratings
TA = 25°C, unless otherwise noted.
D
D
G
Symbol
Description
Value
Units
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
-20
±12
V
TA = 25°C
TA = 70°C
±4.5
ID
Continuous Drain Current @ TJ = 150°C1
±3.6
A
IDM
IS
Pulsed Drain Current2
±16
Continuous Source Current (Source-Drain Diode)1
Operating Junction Temperature Range
Storage Temperature Range
-1.3
TJ
-55 to 150
-55 to 150
°C
°C
TSTG
Thermal Characteristics1
Symbol
Description
Typ
Max
Units
RθJA
RθJA2
RθJF
Junction-to-Ambient Steady State
Junction-to-Ambient t<5 Seconds
Junction-to-Foot
95
51
25
115
62
°C/W
°C/W
°C/W
30
TA = 25°C
TA = 70°C
2.0
1.3
PD
Maximum Power Dissipation
W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
8343.2005.04.1.0
1