Datasheet > AAT8401

AAT8401

更新时间： 2022-04-23 23:00:11

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ANALOGICTECH		/
页数	文件大小	规格书
6页	155K
描述
20V P-Channel Power MOSFET

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AAT8401 数据手册

AAT8401

20V P-Channel Power MOSFET

General Description

Features

The AAT8401 is a low threshold MOSFET designed

for the battery, cell phone, and PDA markets. Using

AnalogicTech™’s ultra high density proprietary

TrenchDMOS™ technology, this product demon-

strates high power handling and small size.

•

V_DS(MAX)= -20V

I_D(MAX)= -2.4A @ 25°C

Low R_DS(ON)

•

100 mΩ @ V_GS= -4.5V

175 mΩ @ V_GS= -2.5V

Applications

SC59 Package

•

Battery Packs

Top View

Cellular & Cordless Telephones

Battery-powered portable equipment

Absolute Maximum Ratings (T_A=25°C unless otherwise noted)

Symbol

Description

Drain-Source Voltage

Gate-Source Voltage

Value

Units

V_DS

V_GS

-20

±12

±2.4

±2.0

±9

-0.9

1.0

T_A= 25°C

T_A= 70°C

I_D

Continuous Drain Current @ T_J=150°C

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Source-Drain Diode)

T_A= 25°C

T_A= 70°C

P_D

Maximum Power Dissipation

0.6

T_J, T_STG

Operating Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Symbol

Description

Typical Junction-to-Ambient steady state

Maximum Junction-to-Ambient t<5 seconds

Typical Junction-to-Foot

Value

Units

R_θJA

R_θJA2

R_θJF

145

125

°C/W

8401.2003.06.0.61

12 3 4 5 6

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