Datasheet > AAT8107

AAT8107

更新时间： 2025-08-08 04:03:15

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描述
20V P-Channel Power MOSFET

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AAT8107 数据手册

AAT8107

20V P-Channel Power MOSFET

™

TrenchDMOS

General Description

Features

The AAT8107 low threshold 20V, P-channel MOS-

FET is a member of AnalogicTech's TrenchDMOS

product family. Using an ultra-high density propri-

etary TrenchDMOS technology, the AAT8107 is

designed for use as a load switch in battery-pow-

ered applications and protection in battery packs.

•

V_DS(MAX)= -20V

I_D(MAX)= -6.5A @ 25°C

Low R_DS(ON)

•

35mΩ @ V_GS= -4.5V

60mΩ @ V_GS= -2.5V

SOP-8L Package

Applications

Top View

•

Battery Packs

Battery-Powered Portable Equipment

Absolute Maximum Ratings

T_A= 25°C, unless otherwise noted.

Symbol

Description

Value

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

-20

±12

T_A= 25°C

T_A= 70°C

±6.5

I_D

Continuous Drain Current @ T_J=150°C¹

±5.2

I_DM

I_S

Pulsed Drain Current²

Continuous Source Current (Source-Drain Diode)¹

±32

-1.7

T_A= 25°C

T_A= 70°C

2.5

P_D

Maximum Power Dissipation¹

1.6

T_J, T_STG

Operating Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Symbol

Description

Value

Units

R_θJA

R_θJA2

R_θJF

Typical Junction-to-Ambient Steady State¹

Maximum Junction-to-Ambient t<10 Seconds¹

Typical Junction-to-Foot¹

°C/W

1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a

1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R_θJF+ R_θFA= R_θJAwhere the

foot thermal reference is defined as the normal solder mounting surface of the device's leads. R_θJFis guaranteed by design; however,

R_θCAis determined by the PCB design. Actual maximum continuous current is limited by the application's design.

2. Pulse test: Pulse Width = 300µs.

8107.2005.05.1.1

12 3 4 5 6

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