Datasheet > AAT8307

AAT8307

更新时间： 2022-04-14 16:22:13

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描述
20V P-Channel Power MOSFET

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AAT8307 数据手册

AAT8307

20V P-Channel Power MOSFET

General Description

Features

The AAT8307 is a low threshold P Channel MOS-

FET designed for the battery, cell phone, and PDA

markets. Using AnalogicTech™'s proprietary ultra-

high density Trench technology, and space saving

small outline J-lead package, performance superi-

or to that normally found in a larger footprint has

been squeezed into the area of a TSOP6 package.

•

V_DS(MAX)= -20V

I_D(MAX)= -6.0A @ 25°C

Low R_DS(ON)

•

35 mΩ @ V_GS= -4.5V

60 mΩ @ V_GS= -2.5V

TSOPJW-8 Package

Applications

Top View

•

Battery Packs

Cellular & Cordless Telephones

Battery-powered portable equipment

Load Switches

Absolute Maximum Ratings (T_A=25°C unless otherwise noted)

Symbol

Description

Drain-Source Voltage

Gate-Source Voltage

Value

Units

V_DS

V_GS

-20

±12

±6.0

±4.8

±32

-1.9

2.1

T_A= 25°C

T_A= 70°C

I_D

Continuous Drain Current @ T_J=150°C

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Source-Drain Diode)

T_A= 25°C

T_A= 70°C

P_D

Maximum Power Dissipation

1.3

T_J, T_STG

Operating Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Symbol

Description

Junction-to-Ambient steady state

Junction-to-Ambient t<5 seconds

Typ

Max

110

Units

R_θJA

R_θJA2

R_θJF

°C/W

Junction-to-Foot

8307.2003.06.0.62

12 3 4 5 6

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