AAT7551IJS-T1

更新时间： 2024-01-03 16:04:40

品牌	Logo	应用领域
ANALOGICTECH		/
页数	文件大小	规格书
6页	103K
描述
20V P-Channel Power MOSFET

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技术参数
数据手册

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AAT7551IJS-T1 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.81	Is Samacsys：	N
湿度敏感等级：	1	Base Number Matches：	1

AAT7551IJS-T1 数据手册

AAT7551

20V P-Channel Power MOSFET

General Description

Features

The AAT7551 is a dual low threshold P-channel

MOSFET designed for the battery, cell phone, and

PDA markets. Using AnalogicTech's ultra-high-

density MOSFET process and space-saving,

small outline, J-lead package, performance supe-

rior to that normally found in a TSOP-6 footprint

has been squeezed into the footprint of an

SC70JW-8 package.

•

Drain-Source Voltage (max): -20V

Continuous Drain Current¹(max):

-2.7A @ 25°C

Low On-Resistance:

— 100mΩ @ V_GS= -4.5V

— 175mΩ @ V_GS= -2.5V

•

Dual SC70JW-8 Package

Applications

Top View

D1 D1 D2 D2

•

Battery Packs

Battery-Powered Portable Equipment

Cellular and Cordless Telephones

Absolute Maximum Ratings

T_A= 25°C, unless otherwise noted.

S1 G1 S2 G2

Symbol

Description

Value

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

-20

±12

T_A= 25°C

±2.7

±2.2

I_D

Continuous Drain Current @ T_J= 150°C¹

T_A= 70°C

I_DM

I_S

Pulsed Drain Current²

±8

Continuous Source Current (Source-Drain Diode)¹

Operating Junction Temperature Range

Storage Temperature Range

-0.6

T_J

-55 to 150

°C

T_STG

Thermal Characteristics¹

Symbol

Description

Typ

Max

Units

R_θJA

R_θJA2

R_θJF

Junction-to-Ambient Steady State

Junction-to-Ambient t<5 Seconds

Junction-to-Foot

132

165

104

°C/W

T_A= 25°C

T_A= 70°C

1.2

P_D

Maximum Power Dissipation

0.75

1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a

1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R_θJF+ R_θFA= R_θJAwhere

the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R_θJFis guaranteed by design;

however, R_θCAis determined by the PCB design. Actual maximum continuous current is limited by the application's design.

2. Pulse test: Pulse Width = 300µs.

7551.2005.04.1.0

12 3 4 5 6

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